STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER
First Claim
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1. A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), comprising a cavity length controlled by etching.
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Abstract
A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
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29 Claims
- 1. A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), comprising a cavity length controlled by etching.
- 10. A method of fabricating a III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), comprising controlling or defining a cavity length of the VCSEL by etching.
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17. A device, comprising:
a non-polar or semi-polar III-nitride Vertical Cavity Surface Emitting Laser (VCSEL) fabricated on a non-polar or semi-polar substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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