Optoelectronic Device Containing at Least One Active Device Layer Having a Wurtzite Crystal Structure, and Methods of Making Same
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Abstract
Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s).
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Citations
81 Claims
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1-59. -59. (canceled)
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60. A method of fabricating a light-generating optoelectronic device, the method comprising:
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providing a starting substrate, wherein the starting substrate has a naturally lamellar single-crystal structure and is selected to induce a wurtzite crystal structure in a coating layer applied to the starting substrate, wherein the coating layer comprises a II-VI semiconductor; forming a light-generating optoelectronic structure, wherein said forming the light-generating optoelectronic structure includes forming the coating layer as an epitaxial layer on the starting substrate so that the coating layer has the wurtzite crystal structure, wherein the coating layer has a base composition of a II-VI semiconductor base composition or a I-VI semiconductor base composition; cleaving the starting substrate so as to provide a sliver of the starting substrate on which the coating layer is formed; and providing a pair of electrodes in electrical communication with the light-generating optical structure so that when a current is supplied across the light-generating optoelectronic structure via the pair of electrodes the light-generating optoelectronic structure emits light. - View Dependent Claims (61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81)
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Specification