FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
First Claim
1. A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber, the film deposition apparatus comprising:
- a turntable configured to rotate a substrate receiving area to receive the substrate;
a process gas supply part configured to supply a process gas in a process area to form a thin film by depositing at least one of a molecular layer and an atomic layer in a layer-by-layer manner on the substrate along with a rotation of the turntable;
a heating part to heat the substrate up to a predetermined film deposition temperature to form a thin film;
a plasma treatment part provided away from the process gas supply part in a rotational direction of the turntable and configured to treat the at least one of the molecular layer and the atomic layer for modification by plasma generated by converting a plasma generating gas to the plasma;
a heat lamp provided above the turntable so as to face a passing area of the substrate on the turntable and configured to heat the substrate up to a predetermined modification temperature higher than the predetermined film deposition temperature for modifying the thin film by irradiating the substrate with light in an adsorption wavelength range of the substrate; and
a control part configured to output a control signal so as to repeat a first step of depositing the at least one of the molecular layer and the atomic layer and a second step of modifying the at least one of the molecular layer and the atomic layer by the plasma, and then to stop supplying the process gas and to heat the substrate by the heat lamp.
1 Assignment
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Accused Products
Abstract
A film deposition apparatus includes a turntable to rotate a substrate thereon, a process gas supply part to supply a process gas to form a thin film on the substrate, a heating part to heat the substrate up to a predetermined film deposition temperature to form a thin film, a plasma treatment part to treat the thin film for modification, a heat lamp provided above the turntable and configured to heat the substrate up to a temperature higher than the predetermined film deposition temperature by irradiating the substrate with light in an adsorption wavelength range of the substrate, and a control part to output a control signal so as to repeat a step of depositing the thin film and a step of modifying the thin film by the plasma, and then to stop supplying the process gas and to heat the substrate by the heat lamp.
86 Citations
9 Claims
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1. A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber, the film deposition apparatus comprising:
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a turntable configured to rotate a substrate receiving area to receive the substrate; a process gas supply part configured to supply a process gas in a process area to form a thin film by depositing at least one of a molecular layer and an atomic layer in a layer-by-layer manner on the substrate along with a rotation of the turntable; a heating part to heat the substrate up to a predetermined film deposition temperature to form a thin film; a plasma treatment part provided away from the process gas supply part in a rotational direction of the turntable and configured to treat the at least one of the molecular layer and the atomic layer for modification by plasma generated by converting a plasma generating gas to the plasma; a heat lamp provided above the turntable so as to face a passing area of the substrate on the turntable and configured to heat the substrate up to a predetermined modification temperature higher than the predetermined film deposition temperature for modifying the thin film by irradiating the substrate with light in an adsorption wavelength range of the substrate; and a control part configured to output a control signal so as to repeat a first step of depositing the at least one of the molecular layer and the atomic layer and a second step of modifying the at least one of the molecular layer and the atomic layer by the plasma, and then to stop supplying the process gas and to heat the substrate by the heat lamp. - View Dependent Claims (2, 3, 4)
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5. A film deposition method to deposit a thin film on a substrate, the film deposition method comprising steps of:
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placing a substrate on a substrate receiving area on a turntable provided in a vacuum chamber, the substrate including a concave portion formed in a surface thereof; rotating the substrate receiving area by rotating the turntable; heating the substrate on the turntable up to a predetermined film deposition temperature to deposit a thin film; depositing the thin film on the substrate by repeating a first step of forming at least one of a molecular layer and an atomic layer on the substrate by supplying a process gas from a process gas supply part to the substrate on the turntable, and a second step of modifying the at least one of the molecular layer and the atomic layer by plasma, by supplying a plasma generating gas into the vacuum chamber and by converting the plasma generating gas to plasma in a plasma treatment part; and modifying the thin film by heating the substrate up to a temperature higher than the predetermined film deposition temperature. - View Dependent Claims (6, 7, 8, 9)
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Specification