SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

• US 20140027618A1
• Filed: 09/26/2013
• Published: 01/30/2014
• Est. Priority Date: 03/29/2011
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: GOTO, Takashi
• Granted Patent: US 9,143,713 B2
• Time in Patent Office: Days
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14641 Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array

Abstract

The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein.

Claims

1. A solid-state imaging device in which pixels each comprising a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate to read out a signal corresponding to electric charges generated in the photoelectric conversion portion are arranged in an array form, wherein:

the photoelectric conversion portion comprises a pixel electrode formed above the semiconductor substrate and split in accordance with each of the pixels, a counter electrode formed above the pixel electrode, and a photoelectric conversion layer formed between the pixel electrode and the counter electrode;

a bias voltage higher than a power supply voltage of the signal reading circuit is applied to the counter electrode so that holes of the electric charges generated in the photoelectric conversion layer move to the pixel electrode;

the signal reading circuit comprises a charge storage portion which is formed in the semiconductor substrate and in which the holes moved to the pixel electrode are stored, an output transistor which has a gate electrode electrically connected to the charge storage portion and which outputs a signal corresponding to the potential of the charge storage portion, and a protection circuit which prevents the potential of the gate electrode from exceeding a predetermined value;

the protection circuit has an impurity region formed in the semiconductor substrate and connected to a power supply;

the output transistor has an impurity region formed in the semiconductor substrate and connected to the power supply; and

the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels so that two impurity regions formed in the semiconductor substrate and connected to the power supply are present in accordance with the two adjacent pixels.

2. The solid-state imaging device according to claim 1, wherein:

the impurity region of the protection circuit in one of the two adjacent pixels and the impurity region of the output transistor in the other of the two pixels are used in common; and

the impurity region of the output transistor in one of the two adjacent pixels and the impurity region of the protection circuit in the other of the two pixels are used in common.

3. The solid-state imaging device according to claim 1, wherein:

the impurity region of the protection circuit in one of the two adjacent pixels and the impurity region of the protection circuit in the other of the two pixels are used in common; and

the impurity region of the output transistor in one of the two adjacent pixels and the impurity region of the output transistor in the other of the two pixels are used in common.

4. The solid-state imaging device according to claim 1, wherein:

the protection circuit is made from an MOS transistor;

a source region of the MOS transistor is the impurity region of the protection circuit; and

a gate electrode and a drain region of the MOS transistor are electrically connected to the charge storage portion respectively.

5. The solid-state imaging device according to claim 2, wherein:

the protection circuit is made from an MOS transistor;

a source region of the MOS transistor is the impurity region of the protection circuit; and

a gate electrode and a drain region of the MOS transistor are electrically connected to the charge storage portion respectively.

6. The solid-state imaging device according to claim 3, wherein:

the protection circuit is made from an MOS transistor;

a source region of the MOS transistor is the impurity region of the protection circuit; and

a gate electrode and a drain region of the MOS transistor are electrically connected to the charge storage portion respectively.

7. The solid-state imaging device according to claim 1, wherein:

the protection circuit is made from a diode;

an anode of the diode is the impurity region of the protection circuit; and

a cathode of the diode is electrically connected to the charge storage portion.

8. The solid-state imaging device according to claim 2, wherein:

the protection circuit is made from a diode;

an anode of the diode is the impurity region of the protection circuit; and

a cathode of the diode is electrically connected to the charge storage portion.

9. The solid-state imaging device according to claim 3, wherein:

the protection circuit is made from a diode;

an anode of the diode is the impurity region of the protection circuit; and

a cathode of the diode is electrically connected to the charge storage portion.

10. An imaging apparatus comprising the solid-state imaging device according to claim 1.