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HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)

  • US 20140027841A1
  • Filed: 07/30/2012
  • Published: 01/30/2014
  • Est. Priority Date: 07/30/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate of a first conductivity type;

    an epitaxial layer of the first conductivity type disposed on a top surface of the semiconductor substrate, wherein the epitaxial layer includes a surface shielded region that is heavily doped positioned above a voltage blocking region that is lightly doped;

    a body region of a second conductivity type that is opposite of the first conductivity type, a source region of the first conductivity type and a gate disposed near the top surface of the surface shielded region and a drain disposed at a bottom surface of the semiconductor substrate;

    a plurality of trenches formed in the surface shielded region, wherein the trenches are lined with a trench insulation material and filled with an electrically conductive trench filling material configured to be in electrical contact with a source electrode on top of the surface shielded region and in electrical contact with the source region;

    a plurality of buried doped regions of the second conductivity type, wherein each is positioned below one of the plurality of trenches, and wherein the buried doped regions extend to a depth substantially the same as the bottom surface of the surface shielded region; and

    one or more charge linking paths of the second conductivity type positioned along one or more trench walls of the plurality of trenches and configured to electrically connect a buried doped region to the body region.

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