HIGH PRESSURE, HIGH POWER PLASMA ACTIVATED CONFORMAL FILM DEPOSITION

• US 20140030444A1
• Filed: 07/29/2013
• Published: 01/30/2014
• Est. Priority Date: 07/30/2012
• Status: Abandoned Application

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Swaminathan, Shankar, Lavoie, Adrien, Pasquale, Frank, Leeser, Karl
• Application Number:
  US13/953,616
• Publication Number:
  US 20140030444A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
• CPC Class Codes: C23C 16/48 by irradiation, e.g. photolysis, radiolysis, particle radiation

Abstract

Methods and apparatus for depositing a film on a substrate surface including plasma assisted surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction are provided. The embodiments disclosed herein relate to methods and apparatus for performing conformal film deposition and atomic layer deposition reactions that result in highly uniform films with low particle contamination. According to various embodiments, the methods and apparatus involve high deposition chamber pressures and plasma generation using high radio frequency powers.

Claims

1. A method of depositing a film on a substrate surface in a single or multi-station reaction chamber, the method comprising:

(a) introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;

(b) introducing a second reactant in vapor phase into the reaction chamber under conditions allowing the second reactant to adsorb onto the substrate surface; and

(c) periodically exposing the substrate surface to plasma when the vapor phase flow of the first reactant has ceased in order to drive a surface reaction between the first and second reactants on the substrate surface to form the film, wherein a radio frequency (RF) power used to drive formation of the plasma is greater than about 1.1 Watts per station per square centimeter of substrate area, and wherein a pressure in the reaction chamber during operations (a)-(c) is greater than 4 Torr.

2. The method of claim 1, further comprising purging the reaction chamber immediately before exposing the substrate surface to plasma.

3. The method of claim 1, further comprising purging the reaction chamber immediately after exposing the substrate surface to plasma.

4. The method of claim 1, wherein the RF power used to drive formation of the plasma is greater than about 1.4 Watts per station per square centimeter of substrate area.

5. The method of claim 4, wherein the RF power used to drive formation of the plasma is between about 1.4-4.2 Watts per station per square centimeter of substrate area.

6. The method of claim 1, wherein the pressure in the reaction chamber is less than about 20 Torr.

7. The method of claim 6, wherein the pressure in the reaction chamber is between about 5-10 Torr.

8. The method of claim 1, wherein the first reactant is a silicon-containing reactant.

9. The method of claim 8, wherein the second reactant is an oxygen-containing reactant.

10. The method of claim 8, wherein the second reactant is a nitrogen-containing reactant.

11. The method of claim 8, wherein the silicon-containing reactant is introduced into the reaction chamber during a pulse having a duration of less than about 50 ms.

12. The method of claim 1, wherein the first reactant is a metal-containing reactant.

13. The method of claim 12, wherein the second reactant is an oxygen-containing reactant.

14. The method of claim 12, wherein the second reactant is a nitrogen-containing reactant.

15. The method of claim 1, wherein the film formed on the substrate has a within wafer non-uniformity of less than about 1.5%.

16. The method of claim 15, wherein the film formed on the substrate has a within wafer non-uniformity of less than about 0.5%

17. The method of claim 1, wherein plasma is exposed to the substrate surface in operation (d) for a period of less than about 250 ms.

18. A method of depositing a film on a substrate surface, the method comprising:

(a) introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;

(b) introducing a second reactant in vapor phase into the reaction chamber under conditions allowing the second reactant to adsorb onto the substrate surface; and

(c) periodically exposing the substrate surface to plasma when the vapor phase flow of the first reactant has ceased in order to drive a surface reaction between the first and second reactants on the substrate surface to form the film, wherein a pressure in the reaction chamber during operations (a)-(c) is between about 5-10 Torr.

19. (canceled)

20. An apparatus for depositing films on a substrate, the apparatus comprising:

a reaction chamber;

an inlet port for delivering gas phase reactants to the reaction chamber;

a plasma generator for providing plasma to the reaction chamber; and

a controller comprising instructions for

(a) introducing a first reactant in vapor phase into the reaction chamber;

(b) introducing a second reactant in vapor phase into the reaction chamber;

(c) periodically striking a plasma to expose the substrate surface to plasma when the vapor phase flow of the first reactant has ceased in order to drive a surface reaction between the first and second reactants on the substrate surface to form the film;

(d) maintaining a pressure in the reaction chamber at greater than 4 Torr; and

(e) applying an RF power greater than about 1.1 Watts per station per square centimeter of substrate area to drive formation of the plasma.

21-28. -28. (canceled)