NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME

• US 20140030448A1
• Filed: 07/24/2013
• Published: 01/30/2014
• Est. Priority Date: 07/30/2012
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Bowen, Heather Regina, O'Neill, Mark Leonard, Xiao, Manchao, Johnson, Andrew David, Lei, Xinjian, Li, Jianheng
• Granted Patent: US 9,243,324 B2
• Time in Patent Office: Days
• US Class Current: 427/578
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/36 Carbonitrides

Abstract

Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms such as 1,4-disilabutane.

Claims

1. A method for forming a non-oxygen silicon-based film on at least one surface of a substrate, the method comprising:

providing at least one surface of the substrate in a reaction chamber;

providing at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms in the reaction chamber; and

forming the non-oxygen silicon-based film on the at least one surface by a deposition process selected from a group consisting of chemical vapor deposition (CVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD) wherein the non-oxygen silicon-based film comprises from about 51 to about 99 atomic weight percent silicon as measured by X-ray photoelectron spectroscopy (XPS).

2. The method of claim 1, wherein the at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms, is selected from the group consisting of:

3. The method of claim 2 wherein the at least one silicon precursor is 1,4-disilabutane.

4. The method of claim 1 wherein the deposition step is conducted at one or more temperatures ranging from about 100°

C. to 650°

C.

5. The method of claim 1 wherein the non-oxygen silicon-based film is selected from the group consisting of a silicon carbide film, a silicon nitride film, and a silicon carbonitride film.

6. The method of claim 1 wherein the deposition process comprises LPCVD.

7. The method of claim 6 further comprising a step of adjusting the atomic of carbon in the non-oxygen silicon-based film by changing the one or more temperature.

8. The method of claim 6 wherein the non-oxygen silicon-based film is an amorphous silicon-rich film.

9. The method of claim 1 wherein the deposition process comprises PECVD.

10. The method of claim 9 further comprising:

providing a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of at least one organosilicon precursor ranges from about 0.25 to about 1.

11. A method for forming a non-oxygen silicon-based film having the formula SixCyHz wherein x is about 51 to 100, y is 0 to 50, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS on at least one surface of a substrate, the method comprising:

providing at least one surface of the substrate in a reaction chamber;

providing at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms in the reaction chamber; and

optionally providing a nitrogen-containing precursor selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, primary amine, secondary amine, tertiary amine, and mixture thereof in the reaction chamber; and

forming the non-oxygen silicon-based film on the at least one surface by a deposition process comprising low pressure chemical vapor deposition (LPCVD).

12. The method of claim 11, wherein the at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms, is selected from the group consisting of:

13. The method of claim 12 wherein the at least one silicon precursor is 1,4-disilabutane.

14. The method of claim 11 wherein the deposition step is conducted at one or more temperatures ranging from about 100°

C. to 650°

C.

15. The method of claim 11 wherein the method further comprises providing a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of at least one organosilicon precursor ranges from about 0.25 to 20.

16. The method of claim 11 wherein the non-oxygen silicon-based film is selected from the group consisting of silicon carbide, silicon nitride and silicon carbonitride.

17. The method of claim 11 wherein the non-oxygen silicon-based film is an amorphous silicon-rich film.

18. The method of claim 11 further comprising an annealing step.

19. A method for forming a non-oxygen silicon-based film on at least one surface of a substrate, the method comprising:

providing at least one surface of the substrate in a reaction chamber;

providing at least one organosilicon precursor having at least two SiH₃ groups with at least one C_2-3 linkage between silicon atoms in the reaction chamber;

optionally providing a nitrogen-containing precursor selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, primary amine, secondary amine, tertiary amine, and mixture thereof in the reaction chamber; and

forming the non-oxygen silicon-based film on the at least one surface by a deposition process comprising plasma enhanced chemical vapor deposition (PECVD), wherein the non-oxygen silicon-based film comprise from about 51 to about 99 atomic weight percent silicon as measured by XPS.

20. The method of claim 19 wherein reaction temperature in the reaction chamber ranging from 100°

C. to 650°

C.

21. The method of claim 19 comprising:

providing a nitrogen-containing precursor and wherein a ratio of the amount of the nitrogen-containing precursor to the amount of at least one organosilicon precursor ranges from about 0 to about 1.