POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

• US 20140030897A1
• Filed: 02/02/2012
• Published: 01/30/2014
• Est. Priority Date: 02/03/2011
• Status: Abandoned Application

• Current Assignee: Nitta Haas Incorporated (Nitta Corporation), Sumco Corporation
• Original Assignee: Nitta Haas Incorporated (Nitta Corporation), Sumco Corporation
• Inventors: Teramoto, Masashi, Ogata, Shinichi, Tanimoto, Ryuichi
• Application Number:
  US13/983,278
• Publication Number:
  US 20140030897A1
• Time in Patent Office: Days
• US Class Current: 438/753
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09G 1/04 Aqueous dispersions C09G1/02 takes precedence
• CPC Class Codes: H01L 21/02024 Mirror polishing
• CPC Class Codes: H01L 21/30604 Chemical etching

Abstract

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

Claims

1. A polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition comprising:

a polishing accelerator including an amine compound or an inorganic alkaline compound;

a water-soluble polymer; and

a block-type compound in which an oxyethylene group and an oxypropylene group are included in a block-type polyether.

2. The polishing composition according to claim 1, further comprising:

a pH buffer including a carbonate and a hydrogencarbonate.

3. A polishing method for polishing a silicon wafer using the polishing composition according to claim 1.