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Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same

  • US 20140034609A1
  • Filed: 10/04/2013
  • Published: 02/06/2014
  • Est. Priority Date: 09/15/2010
  • Status: Active Grant
First Claim
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1. A method for defining a plasma process to be performed on a substrate, comprising:

  • determining a time-dependent substrate temperature to be applied during the plasma process, wherein the time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time;

    determining a time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process, wherein the substrate serves as a lower plasma boundary, and wherein the time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time; and

    storing the determined time-dependent substrate temperature and time-dependent temperature differential in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate during the plasma process.

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