Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same
First Claim
1. A method for defining a plasma process to be performed on a substrate, comprising:
- determining a time-dependent substrate temperature to be applied during the plasma process, wherein the time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time;
determining a time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process, wherein the substrate serves as a lower plasma boundary, and wherein the time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time; and
storing the determined time-dependent substrate temperature and time-dependent temperature differential in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate during the plasma process.
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Abstract
A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.
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Citations
19 Claims
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1. A method for defining a plasma process to be performed on a substrate, comprising:
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determining a time-dependent substrate temperature to be applied during the plasma process, wherein the time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time; determining a time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process, wherein the substrate serves as a lower plasma boundary, and wherein the time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time; and storing the determined time-dependent substrate temperature and time-dependent temperature differential in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate during the plasma process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A system for plasma processing of a substrate, comprising:
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a plasma processing chamber; a substrate holder disposed within the plasma processing chamber and defined to hold a substrate, wherein the substrate holder includes one or more temperature control devices; an upper electrode assembly disposed within the plasma processing chamber above and spaced apart from the substrate holder, wherein the upper electrode assembly includes one or more temperature control devices; and a temperature control module defined to control the one or more temperature control devices of the substrate holder to maintain a target substrate temperature, the temperature control module further defined to control the one or more temperature control devices of the upper electrode assembly to maintain a target temperature differential between the substrate and the upper electrode assembly. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification