GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME

• US 20140034899A1
• Filed: 05/30/2013
• Published: 02/06/2014
• Est. Priority Date: 08/01/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: AHN, Jong-ryoul, SEO, Jeong-tak, PARK, Ji-hoon, JEON, Cheol-ho
• Granted Patent: US 9,269,764 B2
• Time in Patent Office: Days
• US Class Current: 257/9
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 99/00 Subject matter not provided for in other groups of this subclass
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: H01L 21/02104 Forming layers deposition in general C23C; crystal growth in general C30B
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/02612 Formation types
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence

Abstract

A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene.

Claims

1. A graphene semiconductor comprising:

graphene; and

a metal atomic layer disposed on the graphene,

wherein the metal atomic layer comprises a metal, which is capable of charge transfer with the graphene.

2. The graphene semiconductor of claim 1, wherein the metal atomic layer comprises an alkali metal.

3. The graphene semiconductor of claim 1, wherein the metal atomic layer comprises sodium.

4. The graphene semiconductor of claim 1, wherein the metal atomic layer is disposed on a surface of the graphene.

5. The graphene semiconductor of claim 1, wherein the metal atomic layer comprises a two-dimensional film structure.

6. The graphene semiconductor of claim 1, wherein the metal atomic layer has a form of a film, a nanorod, a nano-cluster, or a combination thereof.

7. The graphene semiconductor of claim 1, wherein the metal atomic layer occupies about 30% to about 99% of an entire surface of the graphene.

8. The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.4 electron volt or more.

9. The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.45 electron volt to about 0.8 electron volt.

10. The graphene semiconductor of claim 1 further comprising a first oxide layer disposed on the metal atomic layer.

11. The graphene semiconductor of claim 10, wherein the first oxide layer comprises an oxidation product of a surface of the metal atomic layer.

12. The graphene semiconductor of claim 10 further comprising a second oxide layer disposed on the first oxide layer.

13. An electrical device comprising the graphene semiconductor of claim 1.

14. The electrical device of claim 13, wherein the electrical device is a sensor, a bipolar junction transistor, a field effect transistor, a heterojunction bipolar transistor, a single electron transistor, a light-emitting diode, or an organic electroluminescent diode.

15. A method of manufacturing a graphene semiconductor, the method comprising:

disposing graphene on a substrate; and

disposing a metal atomic layer on the graphene to manufacture the graphene semiconductor.

16. A method of selecting a band gap of graphene, the method comprising:

disposing graphene on a substrate;

disposing a metal atomic layer on the graphene; and

forming a first oxide layer on the graphene by oxidizing the metal atomic layer to select the band gap of the graphene.

17. The method of claim 16, further comprising disposing a second oxide layer on the first oxide layer.

18. The method of claim 16, further comprising repeating the disposing and the forming to dispose an additional metal atomic layer on the graphene and form an additional oxide layer on the additional metal atomic layer by oxidizing the additional metal atomic layer.