Method for Manufacturing at Least One Optoelectronic Semiconductor Device
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Accused Products
Abstract
A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.
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Citations
24 Claims
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1-12. -12. (canceled)
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13. A method for manufacturing an optoelectronic semiconductor device, the method comprising:
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providing a carrier, which has a top side, an underside situated opposite the top side of the carrier and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic semiconductor chips at the top side of the carrier, the chips being arranged in a manner spaced apart from one another in the lateral direction and each having a contact area facing away from the carrier; applying a reflective coating to exposed locations of the carrier and side areas of the optoelectronic semiconductor chips; introducing openings into the reflective coating, the opening completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in the direction of the top side of the carrier; and arranging electrically conductive material on the reflective coating and at least in places in the openings; wherein the electrically conductive material in each case electrically conductively connects a contact area to the connection area assigned thereto; wherein radiation passage areas of the optoelectronic semiconductor chips are free of the reflective coating; and wherein the reflective coating does not project laterally beyond the optoelectronic semiconductor chips. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. An optoelectronic semiconductor device, comprising:
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a carrier, which has a top side, an underside situated opposite the top side of the carrier, and at least one connection area arranged at the top side; an optoelectronic semiconductor chip arranged at the top side of the carrier and having a contact area facing away from the carrier; a reflective coating applied to exposed locations of the carrier and of the optoelectronic semiconductor chip; an opening arranged above the connection area, the opening completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in the direction of the top side of the carrier; electrically conductive material arranged on the reflective coating and in the opening; wherein the electrically conductive material electrically conductively connects the contact area to the connection area; wherein a radiation passage area of the optoelectronic semiconductor chip is free of the reflective coating; and wherein the reflective coating does not project laterally beyond the optoelectronic semiconductor chip. - View Dependent Claims (22, 23)
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24. A method for manufacturing an optoelectronic semiconductor device, the method comprising:
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providing a carrier, which has a top side, an underside situated opposite the top side of the carrier, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic semiconductor chips at the top side of the carrier, the chips being arranged in a manner spaced apart from one another in the lateral direction and each having a contact area facing away from the carrier; applying a reflective coating to exposed locations of the carrier and side areas of the optoelectronic semiconductor chips; introducing openings into the reflective coating, the openings completely penetrating through the reflective coating and extending from a top side of the reflective coating facing away from the carrier in the direction of the top side of the carrier; and arranging electrically conductive material on the reflective coating and in the openings; wherein the electrically conductive material in each case electrically conductively connects a contact area to the connection area assigned thereto; wherein radiation passage areas of the optoelectronic semiconductor chips are free of the reflective coating; wherein the reflective coating does not project laterally beyond the optoelectronic semiconductor chips; and wherein the electrically conductive material only partly fills at least one of the openings; wherein an electrically insulating filling material is arranged in the opening onto exposed locations of the electrically conductive material.
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Specification