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THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

  • US 20140035478A1
  • Filed: 02/23/2012
  • Published: 02/06/2014
  • Est. Priority Date: 03/01/2011
  • Status: Active Grant
First Claim
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1. A thin film transistor formed on an insulating substrate, comprising:

  • a gate electrode formed on the insulating substrate;

    a gate insulating film formed to cover the gate electrode;

    a source electrode and a drain electrode that are formed on the gate insulating film with a predetermined distance to sandwich the gate electrode; and

    a channel layer that includes an oxide semiconductor layer which is formed on the gate insulating film sandwiched between the source electrode and the drain electrode, and one end and the other end being electrically connected respectively to the source electrode and the drain electrode, whereinthe oxide semiconductor layer has two first regions each having a first resistance value, and a second region sandwiched between the two first regions and having a second resistance value higher than the first resistance values, anda length of the second region is shorter than a length between an end part of the source electrode and an end part of the drain electrode.

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