METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20140038351A1
• Filed: 10/01/2013
• Published: 02/06/2014
• Est. Priority Date: 02/26/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, KOEZUKA, Junichi
• Granted Patent: US 9,911,625 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 21/385 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer over a substrate;

forming an oxide insulating layer so as to be in contact with the oxide semiconductor layer;

adding oxygen into the oxide semiconductor layer through the oxide insulating layer;

after adding oxygen, performing heat treatment on the oxide insulating layer and the oxide semiconductor layer;

forming a first insulating layer over the oxide insulating layer; and

forming a gate electrode layer over the first insulating layer.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the step of adding oxygen is performed by irradiating the oxide semiconductor layer with an accelerated oxygen.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide insulating layer comprises a silicon oxide layer.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first insulating layer comprises a silicon nitride layer.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium.

8. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of:

forming a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer;

forming an opening in the oxide insulating layer and the first insulating layer until the source electrode layer and the drain electrode layer are exposed; and

after forming the opening, forming a conductive layer over the first insulating layer,

wherein the conductive layer is directly connected to one of the source electrode layer and the drain electrode layer through the opening.

2. (canceled)

9. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer over a substrate;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an oxide insulating layer so as to be in contact with the oxide semiconductor layer;

adding oxygen into the oxide semiconductor layer through the oxide insulating layer;

after adding oxygen, performing heat treatment on the oxide insulating layer and the oxide semiconductor layer;

forming a first insulating layer over the oxide insulating layer; and

forming a gate electrode layer over the first insulating layer.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the step of adding oxygen is performed by irradiating the oxide semiconductor layer with an accelerated oxygen.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

12. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide insulating layer comprises a silicon oxide layer.

13. The method for manufacturing a semiconductor device according to claim 9, wherein the first insulating layer comprises a silicon nitride layer.

14. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide semiconductor layer comprises indium.

15. The method for manufacturing a semiconductor device according to claim 9, further comprising the steps of:

forming an opening in the oxide insulating layer and the first insulating layer until the source electrode layer and the drain electrode layer are exposed; and

after forming the opening, forming a conductive layer over the first insulating layer,

wherein the conductive layer is directly connected to one of the source electrode layer and the drain electrode layer through the opening.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming a first gate electrode over a substrate;

forming a first insulating layer over the first gate electrode;

forming an oxide semiconductor layer over the first insulating layer;

forming an oxide insulating layer so as to be in contact with the oxide semiconductor layer;

adding oxygen into the oxide semiconductor layer through the oxide insulating layer;

after adding oxygen, performing heat treatment on the oxide insulating layer and the oxide semiconductor layer;

forming a second insulating layer over the oxide insulating layer; and

forming a second gate electrode layer over the second insulating layer.

17. The method for manufacturing a semiconductor device according to claim 16, wherein the step of adding oxygen is performed by irradiating the oxide semiconductor layer with an accelerated oxygen.

18. The method for manufacturing a semiconductor device according to claim 16, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

19. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide insulating layer comprises a silicon oxide layer.

20. The method for manufacturing a semiconductor device according to claim 16, wherein the second insulating layer comprises a silicon nitride layer.

21. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide semiconductor layer comprises indium.

22. The method for manufacturing a semiconductor device according to claim 16, further comprising the steps of:

forming a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer;

forming an opening in the oxide insulating layer and the second insulating layer until the source electrode layer and the drain electrode layer are exposed; and

after forming the opening, forming a conductive layer over the second insulating layer,

wherein the conductive layer is directly connected to one of the source electrode layer and the drain electrode layer through the opening.