TIGHTLY-COUPLED NEAR-FIELD COMMUNICATION-LINK CONNECTOR-REPLACEMENT CHIPS

• US 20140038521A1
• Filed: 10/07/2013
• Published: 02/06/2014
• Est. Priority Date: 12/23/2008
• Status: Active Grant

• Current Assignee: Molex LLC (KOCH Industries Incorporated)
• Original Assignee: Waveconnex Inc.
• Inventors: McCormack, Gary D.
• Granted Patent: US 9,853,696 B2
• Time in Patent Office: Days
• US Class Current: 455/41.1
• CPC Class Codes: H04B 5/48 Transceivers

Abstract

Tightly-coupled near-field transmitter/receiver pairs are deployed such that the transmitter is disposed at a terminal portion of a first conduction path, the receiver is disposed at a terminal portion of a second conduction path, the transmitter and receiver are disposed in close proximity to each other, and the first conduction path and the second conduction path are discontiguous with respect to each other. In some embodiments of the present invention, close proximity refers to the transmitter antenna and the receiver antenna being spaced apart by a distance such that, at wavelengths of the transmitter carrier frequency, near-field coupling is obtained. In some embodiments, the transmitter and receiver are disposed on separate substrates that are moveable relative to each other. In alternative embodiments, the transmitter and receiver are disposed on the same substrate.

Claims

1. An electronic product, comprising:

a first substrate with a first conduction path disposed thereon;

a second substrate with a second conduction path disposed thereon;

a first near-field transmitter disposed on the first substrate and connected to the first conduction path, the first near-field transmitter operable to transmit a first carrier signal at a first transmit carrier frequency; and

a first near-field receiver disposed on the second substrate and connected to the second conduction path, the first near-field receiver operable to near-field couple with the first near-field transmitter at the first transmit carrier frequency;

wherein the first substrate and the second substrate are spaced apart relative to each other such that the first near-field transmitter and the first near-field receiver are disposed within a near-field coupling distance of each other at the first transmitter carrier frequency, wherein the first transmitter carrier frequency is in the extremely high frequency (EHF) range, wherein the first near-field transmitter is operable to translate a data signal from the first conduction path to a modulated carrier and the first near-field receiver is operable to translate the modulated carrier to a baseband signal on the second conduction path.

2. The electronic product of claim 1, wherein the first near-field transmitter has a size and the first near-field receiver has a size, and those sizes taken together are no larger than a mechanical connector otherwise required to connect the first conduction path with the second conduction path.

3. The electronic product of claim 1, wherein the first near-field transmitter is formed, at least partially, in a first integrated circuit;

and the first near-field receiver is formed, at least partially, in a second integrated circuit.

4. The electronic product of claim 3, wherein the first near-field transmitter includes an antenna disposed within the first integrated circuit.

5. The electronic product of claim 3, wherein the first near-field transmitter includes an antenna disposed on the first substrate and coupled to the first integrated circuit.

6. The electronic product of claim 1, wherein the first conduction path and the second conduction path each comprise a single wire.

7. A connector replacement, comprising:

a first near-field transmitter, the first near-field transmitter operable to modulate a first carrier signal at a first transmit carrier frequency in the extremely high frequency (EHF) range; and

a first near-field receiver, the first near-field receiver operable to near-field couple with the first near-field transmitter at the first transmit carrier frequency;

wherein the near-field coupling occurs only if the first near-field transmitter and the first near-field receiver are disposed within a distance from each other that is less than 2D²/lambda, where D is the largest dimension of the source of the radiation, and lambda is the wavelength of the first transmit carrier frequency.

8. The connector replacement of claim 7, wherein the first near-field transmitter is disposed on a first integrated circuit.

9. The connector replacement of claim 7, wherein the first near-field receiver is disposed on a second integrated circuit.

10. The connector replacement of claim 7, wherein the first near-field transmitter is part of a first near-field transceiver on a first integrated circuit.

11. The connector replacement of claim 7, wherein the first near-field receiver is part of a second near-field transceiver on a second integrated circuit.