INDUCTIVELY COUPLED PLASMA ION SOURCE WITH MULTIPLE ANTENNAS FOR WIDE ION BEAM

• US 20140042337A1
• Filed: 08/07/2013
• Published: 02/13/2014
• Est. Priority Date: 08/13/2012
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Biloiu, Costel, Olson, Joseph C., Bell, Edward W., Sieradzki, Manny
• Granted Patent: US 8,809,803 B2
• Time in Patent Office: Days
• US Class Current: 250/424
• CPC Class Codes: H01J 2237/0817 Microwaves
• CPC Class Codes: H01J 2237/31706 characterised by the area treated
• CPC Class Codes: H01J 27/16 using high-frequency excitation, e.g. microwave excitation
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma

Abstract

A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.

Claims

1. A wide ion beam source comprising:

a plurality of RF windows arranged in a predetermined relationship;

a single plasma chamber disposed on a first side of the plurality of RF windows;

a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side; and

a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.

2. The wide ion beam source of claim 1, wherein the difference in frequency is less than 100 kHz.

3. The wide ion beam source of claim 1, wherein the difference in frequency of the first RF signal produced by the first RF source from that of the second RF signal produced by the second RF source is at least 5% and less than 1.0%.

4. The wide ion beam source of claim 1, wherein an end-to-end dimension of the plurality of RF windows is at least two meters.

5. The wide ion beam source of claim 1, wherein the plurality of RF sources operate independently of each other.

6. The wide ion beam source of claim 1, wherein each RF source of the plurality of RF sources further comprises a respective matching network and a respective RF voltage equilibrium capacitor.

7. The wide ion beam source of claim 6, wherein the respective matching network is calibrated to the frequency of its respective RF source.

8. The wide ion beam source of claim 1, wherein the predetermined relationship of the plurality of RF windows comprises a coplanar relationship.

9. The wide ion beam source of claim 1, wherein the plurality of RF sources comprises:

a first source configured to produce a first RF signal at a frequency of 13.46 MHz;

a second source configured to produce a second RF signal at a frequency of 13.56 MHz; and

a third source configured to produce a third RF signal at a frequency of 13.66 MHz.

10. The wide ion beam source of claim 1, further comprising:

an extraction aperture situated on a periphery of the single plasma chamber opposite from the plurality of RF windows, the extraction aperture configured to extract ions from the single plasma chamber, wherein the wide ion beam source is configured to generate an ion beam after extraction through the extraction aperture having a uniformity of 8% or less.

11. A method for producing a wide ion beam comprising:

arranging a plurality of RF windows in a predetermined relationship adjacent a single plasma chamber along a first side of the plurality of RF windows;

disposing an RF antenna of a plurality of RF antennas on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side; and

coupling an RF source of a plurality of RF sources to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.

12. The method of claim 11, wherein the difference in frequency is less than 100 kHz.

13. The method of claim 11, further comprising configuring the first RF source to operate at a frequency that differs from the frequency at which the second RF source is configured to operate by at least 0.5% and less than 1.0%.

14. The method of claim 11, wherein arranging the plurality of RF windows comprises arranging the plurality of RF windows to have an end-to-end dimension of at least two meters.

15. The method of claim 11, further comprising operating the plurality of RF sources independently of each other.

16. The method of claim 11, further comprising spacing the RF antennas with respect to one another by at least 1.5 centimeters.

17. A system for producing a wide ion beam comprising:

a plurality of RF windows arranged in a predetermined relationship;

a single plasma chamber disposed on a first side of the plurality of RF windows;

a plurality of RF antennas, wherein each RF antenna of the plurality of RF antennas is disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side; and

a plurality of RF sources each configured to operate at a frequency within 2% of 13.56 MHz, wherein each RF source is coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.

18. The system of claim 17, wherein the difference in frequency of the first RF signal produced by the first RF source from that of the second RF signal produced by the second RF source is at least 5% and less than 1.0%.

19. The system of claim 17, wherein the plurality of RF sources operate independently of each other.

20. The system of claim 17, comprising at least three RF windows, at least three RF antennas, each RF antenna being coupled to a respective RF window, and at least three RF sources, each RF source being coupled to a respective RF antenna.