SEMICONDUCTOR DEVICE

• US 20140042432A1
• Filed: 08/06/2013
• Published: 02/13/2014
• Est. Priority Date: 08/10/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 9,246,047 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation

Abstract

A semiconductor device in which charge capacity of a capacitor is increased without a reduction in aperture ratio is provided. In a transistor including a light-transmitting semiconductor film and a capacitor in which a dielectric film is provided between a pair of electrodes, the pair of electrodes and the dielectric film are formed using a light-transmitting material. A semiconductor film which is formed on the same surface as the semiconductor film of the transistor is used as one of the pair of electrodes. The dielectric film included in the capacitor is formed using a gate insulating film. The other of the pair of electrodes is formed using a light-transmitting semiconductor film or a light-transmitting conductive film.

Claims

1. A semiconductor device comprising:

a transistor comprising;

a gate electrode over and in contact with an insulating surface;

an insulating layer over the gate electrode; and

a semiconductor layer including a channel formation region over and in contact with the insulating layer; and

a capacitor comprising;

a first conductive layer over and in contact with the insulating surface;

the insulating layer over the first conductive layer; and

a second conductive layer over and in contact with the insulating layer,

wherein each of the semiconductor layer, the first conductive layer, the insulating layer and the second conductive layer is capable of transmitting light.

2. The semiconductor device according to claim 1, wherein the first conductive layer includes an oxide semiconductor.

3. The semiconductor device according to claim 1,

wherein the second conductive layer includes an oxide semiconductor, and

wherein the second conductive layer includes a region having a higher conductivity than the channel formation region of the semiconductor layer.

4. The semiconductor device according to claim 1, wherein at least one of the first conductive layer and the second conductive layer contains one or more elements selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

5. The semiconductor device according to claim 1,

wherein the second conductive layer is electrically connected to a pixel electrode being electrically connected to one of a source and a drain of the transistor, and

wherein the semiconductor device is configured to set a potential of the first conductive layer higher than a potential of the pixel electrode when being driven.

6. The semiconductor device according to claim 1, wherein the semiconductor layer includes an oxide semiconductor.

7. A display device comprising the semiconductor device according to claim 1.

8. An electronic device comprising the semiconductor device according to claim 1.

9. A semiconductor device comprising:

a transistor comprising;

a gate electrode;

a first semiconductor layer including a channel formation region; and

an insulating layer between the gate electrode and the first semiconductor layer; and

a capacitor comprising;

a first conductive layer;

the insulating layer over the first conductive layer; and

a second conductive layer over the insulating layer,

wherein each of the first semiconductor layer, the first conductive layer, the insulating layer and the second conductive layer is capable of transmitting light,

wherein the second conductive layer is a second semiconductor layer being over and in contact with a same surface as the first semiconductor layer.

10. The semiconductor device according to claim 9, wherein the first conductive layer includes an oxide semiconductor.

11. The semiconductor device according to claim 9,

wherein the second conductive layer includes an oxide semiconductor, and

wherein the second conductive layer includes a region having a higher conductivity than the channel formation region of the first semiconductor layer.

12. The semiconductor device according to claim 9, wherein at least one of the first conductive layer and the second conductive layer contains one or more elements selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

13. The semiconductor device according to claim 9,

wherein the second conductive layer is electrically connected to a pixel electrode being electrically connected to one of a source and a drain of the transistor, and

wherein the semiconductor device is configured to set a potential of the first conductive layer higher than a potential of the pixel electrode when being driven.

14. The semiconductor device according to claim 9, wherein the first semiconductor layer includes an oxide semiconductor.

15. A display device comprising the semiconductor device according to claim 9.

16. An electronic device comprising the semiconductor device according to claim 9.

17. A semiconductor device comprising:

a transistor comprising;

a gate electrode;

a first semiconductor layer including a channel formation region; and

an insulating layer between the gate electrode and the first semiconductor layer; and

a capacitor comprising;

a first conductive layer;

a dielectric layer over the first conductive layer; and

a second conductive layer over the dielectric layer,

wherein each of the first semiconductor layer, the first conductive layer, the dielectric layer and the second conductive layer is capable of transmitting light,

wherein the second conductive layer is a second semiconductor layer being over and in contact with a same surface as the first semiconductor layer,

wherein the dielectric layer has a stacked-layer structure of a nitride insulating layer and an oxide insulating layer, and

wherein the second conductive layer is in contact with the nitride insulating layer.

18. The semiconductor device according to claim 17, wherein the first conductive layer includes an oxide semiconductor.

19. The semiconductor device according to claim 17,

wherein the second conductive layer includes an oxide semiconductor, and

wherein the second conductive layer includes a region having a higher conductivity than the channel formation region of the first semiconductor layer.

20. The semiconductor device according to claim 17, wherein at least one of the first conductive layer and the second conductive layer contains one or more elements selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

21. The semiconductor device according to claim 17,

wherein the second conductive layer is electrically connected to a pixel electrode being electrically connected to one of a source and a drain of the transistor, and

wherein the semiconductor device is configured to set a potential of the first conductive layer higher than a potential of the pixel electrode when being driven.

22. The semiconductor device according to claim 17, wherein the first semiconductor layer includes an oxide semiconductor.

23. A display device comprising the semiconductor device according to claim 17.

24. An electronic device comprising the semiconductor device according to claim 17.