SEMICONDUCTOR LIGHT EMTTING DEVICE
First Claim
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1. A semiconductor light emitting device, comprising:
- a substrate;
a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride;
a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride;
a capping layer disposed on the composition grading layer; and
a cladding layer disposed on the capping layer,wherein a composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.
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Abstract
A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner.
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Citations
11 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate; a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride; a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride; a capping layer disposed on the composition grading layer; and a cladding layer disposed on the capping layer, wherein a composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11)
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10. A semiconductor light emitting device, comprising:
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a substrate; a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride; a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride; a capping layer disposed on the composition grading layer; and a cladding layer disposed on the capping layer, wherein the composition grading layer includes layers in which a gradual compositional change occurs in one of the first aluminum nitride and the second aluminum nitride while no compositional change is made in the other of the first aluminum nitride and the second aluminum nitride.
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Specification