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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING GRINDING FROM A BACK SURFACE AND SEMICONDUCTOR DEVICE

  • US 20140042595A1
  • Filed: 08/10/2012
  • Published: 02/13/2014
  • Est. Priority Date: 08/10/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising etching a cavity from a front surface into a semiconductor substrate;

  • providing an etch stop structure from at least one of silicon oxide, silicon nitride and silicon oxynitride at the bottom of the cavity;

    closing the cavity;

    grinding the semiconductor substrate from a back surface opposite to the front surface at least up to an edge of the etch stop structure oriented toward the back surface;

    monitoring, during grinding, a grind stop signal indicating exposure of the etch stop structure; and

    stopping or controlling the grinding in response to detection of the grind stop signal.

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