Process for preparing coated substrates and photovoltaic devices

• US 20140048137A1
• Filed: 11/20/2011
• Published: 02/20/2014
• Est. Priority Date: 11/22/2010
• Status: Abandoned Application

• Current Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Cao, Yanyan, Johnson, Lynda Kaye, Lu, Meijun, Malajovich, Irina, Radu, Daniela Rodica
• Application Number:
  US13/885,499
• Publication Number:
  US 20140048137A1
• Time in Patent Office: Days
• US Class Current: 136/264
• CPC Class Codes: C09D 11/52 Electrically conductive inks
• CPC Class Codes: H01L 31/0272 Selenium or tellurium
• CPC Class Codes: H01L 31/0326 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

This invention provides compositions and the processes for preparing the compositions that are useful for preparing films of CZTS and its selenium analogues on a substrate. Such films are useful in preparing photovoltaic devices. This invention also provides processes for preparing a semiconductor layer comprising CZTS/Se microparticles embedded in an inorganic matrix. This invention also provides processes for making a photovoltaic devices and the photovoltaic devices so produced.

Claims

1. An ink comprising:

a) a plurality of CZTS/Se microparticles;

b) a plurality of particles selected from the group consisting of;

CZTS/Se nanoparticles;

elemental Cu-, elemental Zn- or elemental Sn-containing particles;

binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles; and

mixtures thereof; and

c) a vehicle.

2. The ink of claim 1, wherein at least one of the ink, the plurality of particles or the vehicle have been heat processed at a temperature of greater than about 100°

C.

3. The ink of claim 1, wherein the molar ratio of Cu:

Zn;

Sn is about 2;

1;

1.

4. The ink of claim 1, wherein the plurality of particles comprises CZTS/Se nanoparticles, binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles, or the ink further comprises an elemental chalcogen.

5. The ink of claim 4, wherein the binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles are selected from the group consisting of:

sulfide particles, selenide particles, sulfide/selenide particles, and mixtures thereof; and

the elemental chalcogen is sulfur, selenium, or a mixture thereof.

6. The ink of claim 1, wherein the plurality of particles comprises nanoparticles having an average longest dimension of less than about 500 nm, as determined by electron microscopy.

7. The ink of claim 1, wherein the elemental Cu-, elemental Zn- or elemental Sn-containing particles are selected from the group consisting of:

Cu particles, Cu—

Sn alloy particles, Cu—

Zn alloy particles, Zn particles, Zn—

Sn alloy particles, Sn particles; and

mixtures thereof; and

the binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles are selected from the group consisting of;

Cu₂S/Se particles, CuS/Se particles, Cu₂Sn(S/Se)₃ particles, Cu₄Sn(S/Se)₄ particles, ZnS/Se particles Sn(S/Se)₂ particles, SnS/Se particles, and mixtures thereof.

8. The ink of claim 1, wherein the CZTS/Se nanoparticles and Cu-, Zn- or Sn-containing chalcogenide particles further comprise an organic capping agent.

9. A coated substrate comprising:

a) a substrate; and

b) at least one layer disposed on the substrate comprising;

i) a plurality of CZTS/Se microparticles;

ii) a plurality of particles selected from the group consisting of;

CZTS/Se nanoparticles;

elemental Cu-, elemental Zn- or elemental Sn-containing particles;

binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles; and

mixtures thereof.

10. The coated substrate of claim 9, wherein the molar ratio of Cu:

Zn;

Sn is about 2;

1;

1.

11. The coated substrate of claim 9, wherein the plurality of particles comprises CZTS/Se nanoparticles or binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles, or the at least one layer further comprises an elemental chalcogen.

12. The coated substrate of claim 9, wherein the elemental Cu-, elemental Zn- or elemental Sn-containing particles are selected from the group consisting of:

Cu particles, Cu—

Sn alloy particles, Cu—

Zn alloy particles, Zn particles, Zn—

Sn alloy particles, Sn particles; and

mixtures thereof; and

the binary or ternary Cu-, Zn- or Sn-containing chalcogenide particles are selected from the group consisting of;

Cu₂S/Se particles, CuS/Se particles, Cu₂Sn(S/Se)₃ particles, Cu₄Sn(S/Se)₄ particles, ZnS/Se particles, Sn(S/Se)₂ particles, SnS/Se particles, and mixtures thereof.

13. The coated substrate of claim 9, wherein the plurality of particles has been heat-processed at a temperature greater than about 100°

C.;

or the microparticles and plurality of particles have been heat-processed at a temperature greater than about 100°

C.

14. A film comprising:

a) an inorganic matrix; and

b) CZTS/Se microparticles characterized by an average longest dimension of 0.5-200 microns, wherein the microparticles are embedded in the inorganic matrix.

15. A photovoltaic device comprising the film of claim 14.