SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME
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Accused Products
Abstract
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
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Citations
20 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a connection electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer over the oxide semiconductor layer; an insulating film over the source electrode layer; a gate wiring over the insulating film; and a source wiring over the insulating film, the source wiring overlapping with the connection electrode layer, wherein the gate wiring is electrically connected to the gate electrode layer and the connection electrode layer, wherein the source wiring is electrically connected to the source electrode layer, and wherein the oxide semiconductor layer comprises a nanocrystal grain. - View Dependent Claims (3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a connection electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer over the oxide semiconductor layer; an insulating film over the source electrode layer; a gate wiring over the insulating film; and a source wiring over the insulating film, the source wiring overlapping with the connection electrode layer, wherein the gate wiring is electrically connected to the gate electrode layer and the connection electrode layer, wherein the source wiring is electrically connected to the source electrode layer, and wherein the oxide semiconductor layer comprises a crystal grain having a diameter of 1 nm to 10 nm. - View Dependent Claims (8, 9, 10, 11)
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12. A semiconductor device comprising:
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a gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a connection electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; an inorganic layer over the oxide semiconductor layer, the inorganic layer comprising oxygen; a source electrode layer over the oxide semiconductor layer and the inorganic layer; an insulating film over the source electrode layer; a gate wiring over the insulating film; and a source wiring over the insulating film, the source wiring overlapping with the connection electrode layer, wherein the gate wiring is electrically connected to the gate electrode layer and the connection electrode layer, wherein the source wiring is electrically connected to the source electrode layer, and wherein the oxide semiconductor layer comprises a nanocrystal grain. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification