SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS

• US 20140048838A1
• Filed: 06/27/2013
• Published: 02/20/2014
• Est. Priority Date: 08/14/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: YANG, Jong In, HONG, Hyun Kwon, KIM, Yong Il, SONG, Kwang Min, LIM, Wan Tae, HAN, Se Jun
• Granted Patent: US 9,099,629 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Claims

1. A semiconductor light emitting device, comprising:

a first conductive semiconductor layer;

an active layer disposed on a first portion of the first conductive semiconductor layer;

a second conductive semiconductor layer disposed on the active layer;

a first internal electrode disposed on a second portion of the first conductive semiconductor layer separate from the first portion;

a second internal electrode disposed on at least one portion of the second conductive semiconductor layer and connected to the second conductive semiconductor layer;

an insulating part disposed on one portion of the second portion, the first and second internal electrodes respectively and having an open region to expose at least one portion of each of the first and second internal electrodes; and

first and second pad electrodes disposed on the insulating part and each connected to a respective one of the first and second internal electrodes exposed through the open region.

2. The semiconductor light emitting device of claim 1, wherein:

the first internal electrode is formed of a plurality of electrodes separate from each other and disposed on the second portion of the first conductive semiconductor layer, and

the first pad electrode interconnects the electrodes of the plurality of electrodes forming the first internal electrode.

3. The semiconductor light emitting device of claim 2, wherein the insulating part exposes at least a portion of each of the plurality of electrodes forming the first internal electrode.

4. The semiconductor light emitting device of claim 1, wherein:

the first internal electrode includes a plurality of first regions and a plurality of second regions connecting the plurality of first regions, and

each of the first regions has a width that is larger than a width of each of the second regions.

5. The semiconductor light emitting device of claim 4, wherein the plurality of first regions are arranged in a plurality of rows and a plurality of columns, and each of the second regions connects first regions that are arranged in a same row.

6. The semiconductor light emitting device of claim 5, wherein the first internal electrode includes a third region connecting first regions in different rows among the plurality of rows.

7. The semiconductor light emitting device of claim 6, wherein the first internal electrode is formed to a same thickness in the first regions and in the second regions thereof.

8. The semiconductor light emitting device of claim 1, wherein the insulating part does not cover an upper surface of the first internal electrode.

9. The semiconductor light emitting device of claim 1, wherein the first internal electrode and the first pad electrode are formed of the same material.

10. A method of manufacturing a semiconductor light emitting device, comprising:

forming a groove in a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, and a second conductive semiconductor layer formed on the active layer, by removing at least one portion of the second conductive semiconductor layer and the active layer so as to expose a first portion of the first conductive semiconductor layer;

forming a first internal electrode connected to the first portion of the first conductive semiconductor layer by filling a portion of the groove with an electrode material;

forming a second internal electrode connected to the second conductive semiconductor layer on at least one portion of the second conductive semiconductor layer;

forming an insulating part by filling a remainder portion of the groove with an insulating material, wherein the insulating part is formed on one portion of the second portion, the first and second internal electrodes respectively and formed to have an open region exposing at least one portion of each of the first and second internal electrodes; and

forming first and second pad electrodes on the insulating part and each connected to a respective one of the first and second internal electrodes exposed through the open region.

11. The method of claim 10, wherein the first internal electrode is formed to have a shape corresponding to a shape of the groove.

12. The method of claim 10, wherein the groove includes a plurality of first regions separate from each other and a plurality of second regions connecting the plurality of first regions, and each of the first regions has a width that is larger than a width of each of the second regions.

13. The method of claim 12, wherein the groove includes a third region connecting first regions that area arranged in different rows among the plurality of rows.

14. The method of claim 13, wherein the first internal electrode is formed to fill a portion of the third region.

15. The method of claim 12, wherein the first internal electrode is formed to fill a portion of the first regions and a portion of the second regions.

16. The method of claim 12, wherein the first internal electrode is formed to fill a portion of the first regions and is not formed in the second regions.

17. The method of claim 12, wherein the first internal electrode is formed to include a plurality of contact regions each filling a portion of a corresponding first region, and the insulating part is formed to expose at least one portion of each of the plurality of contact regions and to cover the second regions such that the second regions are not exposed.

18. The method of claim 10, wherein the groove is formed to have a shape in which a plurality of stripes are arranged in parallel to each other, when viewed from above the second conductive semiconductor layer, and the plurality of stripes are connected to each other through another region of the groove formed in a direction perpendicular to the plurality of stripes.

19. The method of claim 18, wherein the insulating part does not cover an upper surface of the first internal electrode.

20. A light emitting apparatus, comprising:

a mounting substrate; and

a semiconductor light emitting device disposed on the mounting substrate and configured to emit light when an electrical signal is applied thereto,

wherein the semiconductor light emitting device includes;

a first conductive semiconductor layer;

an active layer disposed on a first portion of the first conductive semiconductor layer;

a second conductive semiconductor layer disposed on the active layer;

a first internal electrode disposed on a second portion of the first conductive semiconductor layer separate from the first portion;

a second internal electrode disposed on at least one portion of the second conductive semiconductor layer;

an insulating part disposed on one portion of the second portion, the first and second internal electrodes respectively and having an open region to expose at least one portion of each of the first and second internal electrodes; and

first and second pad electrodes disposed on the insulating part and each connected to a respective one of the first and second internal electrodes exposed through the open region.