Trench Connection Between a Transistor and a Further Component

• US 20140048871A1
• Filed: 07/01/2013
• Published: 02/20/2014
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus, Hirler, Franz, Krischke, Norbert
• Granted Patent: US 9,299,834 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.

Claims

1. A semiconductor component arrangement, comprising:

a semiconductor body have a first side and a second side;

a transistor structure integrated in the semiconductor body, the transistor structure including a source and a drain;

a further component integrated in the semiconductor body;

at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source and the drain to the further component.

2. The semiconductor component arrangement of claim 1, further comprising a vertical terminal connection electrically connecting the first electrode structure to the at least one of the source and the drain.

3. The semiconductor component arrangement of claim 2, wherein the at least one of the source and the drain comprises the source.

4. The semiconductor component arrangement of claim 1, wherein the transistor structure further comprises a drift zone, and further comprising an insulating layer disposed between the at least one electrode and the drift zone.

5. The semiconductor component arrangement of claim 4, wherein the transistor structure further comprises a body zone, and wherein the insulating layer is further disposed between the at least one electrode and the body zone.

6. The semiconductor component arrangement of claim 1, wherein the transistor structure comprises a lateral MOSFET transistor.

7. The semiconductor component arrangement of claim 1, further comprising a second electrode structure disposed in at least a second trench, the second electrode structure comprising at least a second electrode, the second electrode structure electrically connecting at least one of the source and the drain to terminal contacts on the first side of the semiconductor body, the terminal contacts spaced apart from the drain and the source.

8. The semiconductor component arrangement of claim 1, wherein the first electrode structure electrically connects the at least one of the source and the drain to terminal contacts on the first side of the semiconductor body, the terminal contacts spaced apart from the drain and the source.

9. The semiconductor component arrangement of claim 1, further comprising an insulating layer disposed between the first side of the semiconductor body and the first electrode structure.

10. The semiconductor component arrangement of claim 1, wherein the drain and the source are formed adjacent the first side of the semiconductor body.

11. The semiconductor component arrangement of claim 10, wherein the transistor structure further comprises a gate electrode disposed above the first side of the semiconductor body and a gate dielectric disposed between the gate electrode and the first side of the semiconductor body.

12. The semiconductor component arrangement of claim 11, further comprising a vertical terminal connection electrically connecting the first electrode structure to the at least one of the source and the drain.

13. The semiconductor component arrangement of claim 12, wherein the at least one of the source and the drain comprises the source.

14. The semiconductor component arrangement of claim 11, wherein the transistor further comprises a drift zone, and further comprising an insulating layer disposed between the at least one electrode and the drift zone.

15. The semiconductor component arrangement of claim 14, wherein the transistor further comprises a body zone, and wherein the insulating layer is further disposed between the at least one electrode and the body zone.