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Trench Connection Between a Transistor and a Further Component

  • US 20140048871A1
  • Filed: 07/01/2013
  • Published: 02/20/2014
  • Est. Priority Date: 03/07/2006
  • Status: Active Grant
First Claim
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1. A semiconductor component arrangement, comprising:

  • a semiconductor body have a first side and a second side;

    a transistor structure integrated in the semiconductor body, the transistor structure including a source and a drain;

    a further component integrated in the semiconductor body;

    at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source and the drain to the further component.

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