Please download the dossier by clicking on the dossier button x
×

MEMORY ADDRESS TRANSLATION METHOD FOR FLASH STORAGE SYSTEM

  • US 20140052899A1
  • Filed: 08/18/2012
  • Published: 02/20/2014
  • Est. Priority Date: 08/18/2012
  • Status: Abandoned Application
First Claim
Patent Images

1. A memory address translation method for flash storage system, which the flash memory storage system has a RAM including a level-one mapping and a flash memory including a level-two mapping table, the steps comprising:

  • saving at least one first entry with two information in the level-one mapping table storing in the RAM, one information of the first entry is a validation of the first entry, and the other information of the first entry is a location of level-two mapping; and

    saving at least one second entry with two information in the level-two mapping table storing in the flash memory, one information of the second entry is a validation of the second entry, and the other information of the second entry is a physical location of data in flash memory.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×