SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING TRANSPARENT PLATE WITH SLANTED SIDE SURFACE

• US 20140054621A1
• Filed: 08/23/2013
• Published: 02/27/2014
• Est. Priority Date: 08/23/2012
• Status: Abandoned Application

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Seko, Toshihiro
• Application Number:
  US13/974,843
• Publication Number:
  US 20140054621A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: F21S 41/143 the main emission direction of the LED being parallel to the optical axis of the illuminating device
• CPC Class Codes: F21S 41/151 arranged in one or more lines
• CPC Class Codes: F21Y 2103/10 comprising a linear array of point-like light-generating elements
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

In a semiconductor light-emitting device including a substrate, a semiconductor light-emitting element mounted on a top surface of the substrate, a transparent plate adapted to cover a top surface of the semiconductor light-emitting element, a wavelength-converting layer formed between a top surface of the semiconductor light-emitting element and a bottom surface of the transparent plate, and a reflective material layer surrounding all side surfaces of the semiconductor light-emitting element, the wavelength-converting layer and the transparent plate, at least one of the side surfaces of the transparent plate is slanted in an inward direction at the bottom surface of the transparent plate.

Claims

1. A semiconductor light-emitting device comprising;

a substrate;

a semiconductor light-emitting element mounted on a top surface of said substrate;

a transparent plate adapted to cover a top surface of said semiconductor light-emitting element;

a wavelength-converting layer formed between a top surface of said semi conductor light-emitting element and a bottom surface of said transparent plate; and

a reflective material layer surrounding all side surfaces of said semiconductor light-emitting element, said wavelength-converting layer and said transparent plate,

at least one of the side surfaces of said transparent plate being slanted in an inward direction at the bottom surface of said transparent plate.

2. The semiconductor light-emitting device as set forth in claim 1, further comprising a frame mounted on a periphery of the top surface of said substrate,

said reflective material layer being disposed between said semiconductor light-emitting element and said frame, between said wavelength-converting layer and said frame, and between said transparent plate and said frame.

3. The semiconductor light-emitting device as set forth in claim 1, wherein said wavelength-converting layer includes phosphor particles and spacer particles, a thickness of said wavelength-converting layer being determined by a size of said spacer particles.

4. The semiconductor light-emitting device as set forth in claim 3, wherein the thickness of said wavelength-converting layer is determined so that said transparent plate is in parallel with said semiconductor light-emitting element.

5. A semiconductor light-emitting device comprising:

a substrate;

a plurality of semiconductor light-emitting elements serially mounted on a top surface of said substrate;

a transparent plate adapted to cover a top surface of said semiconductor light-emitting elements;

a wavelength-converting layer formed between a top surface of said semiconductor light-emitting elements and a bottom surface of said transparent plate; and

a reflective material layer surrounding all side surfaces of said semiconductor light-emitting elements, said wavelength-converting layer and said transparent plate,

a longer one of the side surfaces of said transparent plate being slanted in an inward direction at the bottom surface of said transparent plate while the other side surfaces of said transparent plate are vertical with respect to the bottom surface thereof.

6. The semiconductor light-emitting device as set forth in claim 5, further comprising a frame mounted on a periphery of the top surface of said substrate,

said reflective material layer being disposed between said semiconductor light-emitting element and said frame, between said wavelength-converting layer and said frame, and between said transparent plate and said frame.

7. The semiconductor light-emitting device as set forth in claim 5, wherein said wavelength-converting layer includes phosphor particles and spacer particles, a thickness of said wavelength-converting layer being determined by a size of said spacer particles.

8. The semiconductor light-emitting device as set forth in claim 7, wherein the thickness of said wavelength-converting layer is determined so that said transparent plate is in parallel with said semiconductor light-emitting elements.