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ALIGNED GATE-ALL-AROUND STRUCTURE

  • US 20140054724A1
  • Filed: 08/24/2012
  • Published: 02/27/2014
  • Est. Priority Date: 08/24/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate;

    a semiconductor layer disposed between a substrate, upon which the semiconductor device is formed, and at least one of;

    at least some of a first channel of the semiconductor device;

    at least some of a source region of the semiconductor device;

    orat least some of a drain region of the semiconductor device;

    a dielectric layer disposed between the substrate and at least one of;

    at least some of the first channel;

    at least some of the source region;

    orat least some of the drain region;

    a first gate portion of the gate disposed above the first channel; and

    a second gate portion of the gate disposed between the substrate and the first channel and aligned with the first gate portion.

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