Isolated Through Silicon Vias in RF Technologies
First Claim
1. A method for providing electrical isolation in a semiconductor substrate, said method comprising:
- etching a deep trench isolation loop to a first depth into said semiconductor substrate;
depositing a dielectric material into said deep trench isolation loop;
etching one or more through silicon vias (TSVs) to a second depth into said semiconductor substrate, said one or more TSVs being disposed within a perimeter of said deep trench isolation loop.
1 Assignment
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Accused Products
Abstract
Disclosed are a structure for providing electrical isolation in a semiconductor substrate and an associated method for the structure'"'"'s fabrication. The structure includes a deep trench isolation loop having a first depth disposed in the semiconductor substrate. A dielectric material is disposed in the deep trench isolation loop and one or more through silicon vias (TSVs), having a second depth, are disposed in the semiconductor substrate and within a perimeter of the deep trench isolation loop. A portion of the semiconductor substrate surrounding the deep trench isolation loop may be doped. A metallic filler may be disposed within the one or more TSVs and the metallic filler may be in direct electrical contact with the semiconductor substrate.
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Citations
20 Claims
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1. A method for providing electrical isolation in a semiconductor substrate, said method comprising:
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etching a deep trench isolation loop to a first depth into said semiconductor substrate; depositing a dielectric material into said deep trench isolation loop; etching one or more through silicon vias (TSVs) to a second depth into said semiconductor substrate, said one or more TSVs being disposed within a perimeter of said deep trench isolation loop. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure for providing electrical isolation in a semiconductor substrate, said structure comprising:
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a deep trench isolation loop having a first depth disposed in said semiconductor substrate; a dielectric material disposed in said deep trench isolation loop; one or more through silicon vias (TSVs), having a second depth, disposed in said semiconductor substrate and within a perimeter of said deep trench isolation loop. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification