THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
First Claim
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1. A manufacturing method of a thin film transistor (TFT), comprising:
- forming a gate electrode on a substrate;
forming a gate insulating layer on the substrate formed with the gate electrode;
forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer;
wherein the etch stop layer is obtained by an oxidation treatment.
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Abstract
According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.
10 Citations
26 Claims
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1. A manufacturing method of a thin film transistor (TFT), comprising:
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forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer; wherein the etch stop layer is obtained by an oxidation treatment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 18, 19, 20)
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21. A TFT, comprising:
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a substrate; a gate electrode and a gate insulating layer, provided on the substrate; an oxide semiconductor active layer, provided on the gate insulating layer; an etch stop layer, provided on the oxide semiconductor active layer; a source/drain electrode, provided on the oxide semiconductor active layer and on both sides of the etch stop layer, wherein the etch stop layer is obtained by an oxidation treatment. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification