SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A method of manufacturing a semiconductor light emitting device, comprising:
- performing epitaxial growth of a nitride multilayer film on top of a first substrate;
forming a light emitting layer including a nitride semiconductor on top of the nitride multilayer film;
joining a second substrate to a laminate that includes the first substrate, the nitride multilayer film and the light emitting layer; and
removing the first substrate to expose the nitride multilayer film,wherein the epitaxial growth of the nitride multilayer film is performed by forming a first layer including a first nitride semiconductor containing aluminum, forming a second layer including a second nitride semiconductor with a refractive index different from the refractive index of the first nitride semiconductor, and forming a third layer including the first nitride semiconductor containing aluminum.
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Abstract
A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor light emitting device, comprising:
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performing epitaxial growth of a nitride multilayer film on top of a first substrate; forming a light emitting layer including a nitride semiconductor on top of the nitride multilayer film; joining a second substrate to a laminate that includes the first substrate, the nitride multilayer film and the light emitting layer; and removing the first substrate to expose the nitride multilayer film, wherein the epitaxial growth of the nitride multilayer film is performed by forming a first layer including a first nitride semiconductor containing aluminum, forming a second layer including a second nitride semiconductor with a refractive index different from the refractive index of the first nitride semiconductor, and forming a third layer including the first nitride semiconductor containing aluminum. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor light emitting device, comprising:
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a substrate; a light emitting layer including a nitride semiconductor formed on top of the substrate; and a nitride multilayer film formed on top of the light emitting layer, wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer laminated an exposed surface side of the second layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor light emitting device, comprising:
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bonding a laminate including a semiconductor substrate, a nitride multilayer film formed on the semiconductor substrate, and a light emitting layer formed on the nitride multilayer film on a supporting substrate from a side of the light emitting layer; and removing the semiconductor substrate to expose the nitride multilayer film, wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer laminated n an exposed surface side of the second layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification