SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20140061660A1
• Filed: 03/06/2013
• Published: 03/06/2014
• Est. Priority Date: 08/30/2012
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SUGAWARA, Hideto
• Granted Patent: US 9,312,444 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.

Claims

1. A method of manufacturing a semiconductor light emitting device, comprising:

performing epitaxial growth of a nitride multilayer film on top of a first substrate;

forming a light emitting layer including a nitride semiconductor on top of the nitride multilayer film;

joining a second substrate to a laminate that includes the first substrate, the nitride multilayer film and the light emitting layer; and

removing the first substrate to expose the nitride multilayer film,

wherein the epitaxial growth of the nitride multilayer film is performed by forming a first layer including a first nitride semiconductor containing aluminum, forming a second layer including a second nitride semiconductor with a refractive index different from the refractive index of the first nitride semiconductor, and forming a third layer including the first nitride semiconductor containing aluminum.

2. The method of claim 1, wherein the first substrate comprises one of a silicon substrate and a silicon nitride substrate.

3. The method of claim 1, wherein, during said performing the epitaxial growth of the nitride multilayer, pairs of the first layer and the second layer are formed k times, where k is an integer of 1 or more, and thereafter the third layer is formed.

4. The method of claim 1, wherein, during said performing the epitaxial growth of the nitride multilayer, the third layer is formed, and thereafter pairs of the second layer and the first layer are formed k times, where k is an integer of 1 or more.

5. The method of claim 1, wherein when a thickness of a pair including the first layer and the second layer is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

6. The method of claim 5, wherein when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

7. The method of claim 1, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.

8. A semiconductor light emitting device, comprising:

a substrate;

a light emitting layer including a nitride semiconductor formed on top of the substrate; and

a nitride multilayer film formed on top of the light emitting layer,

wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer laminated an exposed surface side of the second layer.

9. The semiconductor light emitting device of claim 8, wherein, when a thickness of the pair is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

10. The semiconductor light emitting device of claim 9, wherein, when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

11. The semiconductor light emitting device of claim 8, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.

12. The semiconductor light emitting device of claim 8, wherein a layer including gallium nitride is disposed between the light emitting layer and the nitride multilayer film.

13. The semiconductor light emitting device of claim 12, wherein the first layer includes aluminum nitride, and a thickness of the first layer is between 10 nm and 52 nm.

14. The semiconductor light emitting device of claim 8, wherein the nitride multilayer film is epitaxially grown.

15. A method of manufacturing a semiconductor light emitting device, comprising:

bonding a laminate including a semiconductor substrate, a nitride multilayer film formed on the semiconductor substrate, and a light emitting layer formed on the nitride multilayer film on a supporting substrate from a side of the light emitting layer; and

removing the semiconductor substrate to expose the nitride multilayer film,

wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer laminated n an exposed surface side of the second layer.

16. The method of claim 15, wherein the nitride multilayer film is epitaxially grown.

17. The method of claim 15, wherein the semiconductor substrate comprises one of a silicon substrate and a silicon nitride substrate.

18. The method of claim 15, wherein when a thickness of a pair including the first layer and the second layer is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

19. The method of claim 15, wherein when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

20. The method of claim 15, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.