GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

• US 20140061662A1
• Filed: 03/15/2013
• Published: 03/06/2014
• Est. Priority Date: 04/07/2006
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd., SixPoint Materials, Inc.
• Inventors: Hashimoto, Tadao, Letts, Edward, Hoff, Sierra
• Granted Patent: US 9,543,393 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: C30B 33/10 in solutions or melts
• CPC Class Codes: C30B 7/105 using ammonia as solvent, i.e. ammonothermal processes
• CPC Class Codes: H01L 21/02013 Grinding, lapping
• CPC Class Codes: H01L 21/02019 Chemical etching
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence

Abstract

The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

Claims

1. A group III nitride wafer having composition of Ga_xAl_yIn_1-x-yN (0≦

x≦

1, 0≦

x+y≦

1), wherein the both surfaces are roughened from a mechanical process and the surfaces are chemically treated to visually distinguish one surface from another.

2. A group III nitride wafer according to claim 1, wherein the mechanical process comprises slicing the wafer from a bulk crystal of group III nitride.

3. A group III nitride wafer according to claim 1, wherein the mechanical process is grinding of the wafer.

4. A group III nitride wafer according to claim 2, wherein the wafer was sliced from a bulk crystal of group III nitride with a multiple wire saw.

5. A group III nitride wafer according to claim 1, wherein the chemical treatment is etching.

6. A group III nitride wafer according to claim 5, wherein the etching is performed using a wet etchant.

7. A group III nitride wafer according to claim 6, wherein the wet etchant comprises phosphoric acid.

8. A group III nitride wafer according to claim 7, wherein the chemical treatment is etching in phosphoric acid or its mixture at 50°

C. or higher.

9. A group III nitride wafer according to claim 1, wherein the orientation is c-plane with misorientation from minus 10 degree to plus 10 degree.

10. A group III nitride wafer according to claim 1, wherein the orientation is a semipolar plane with misorientation from minus 10 degree to plus 10 degree.

11. A group III nitride wafer according to claim 1, wherein the orientation is a nonpolar plane with misorientation from minus 10 degree to minus 0.1 degree or plus 0.1 degree to plus 10 degree.

12. A group III nitride wafer according to claim 1, wherein the surface area is more than 100 mm².

13. A group III nitride wafer according to claim 1, wherein the composition comprises GaN.

14. A group III nitride wafer comprising a first layer and a second layer of damaged group III nitride on opposite faces of a third layer of highly oriented poly or single crystalline group III nitride, wherein the first and the second layer were formed through a mechanical process and the surface of the second layer is made visually distinguishable from the surface of the first layer by a chemical etching.

15. A group III nitride wafer according to claim 14, wherein the wafer is sliced from a bulk crystal of group III nitride.

16. A group III nitride wafer according to claim 14, wherein the wafer is sliced from a bulk crystal of group III nitride with a multiple wire saw.

17. A group III nitride wafer according to claim 14, wherein the chemical etching uses acid or base.

18. A group III nitride wafer according to claim 17, wherein the chemical etching uses phosphoric acid or its mixture.

19. A group III nitride wafer according to claim 18, wherein the chemical etching uses phosphoric acid or its mixture at 50°

C. or higher.

20. A group III nitride wafer according to claim 14, wherein the surface area of the wafer is more than 100 mm².

21. A group III nitride wafer according to claim 14, wherein the density of line defect and grain boundary of the third layer is less than 10⁶ cm⁻

2.

22. A group III nitride wafer according to claim 14, wherein the group III nitride comprises GaN.