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NITRIDE SEMICONDUCTOR WAFER

  • US 20140061665A1
  • Filed: 08/08/2013
  • Published: 03/06/2014
  • Est. Priority Date: 09/03/2012
  • Status: Active Grant
First Claim
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1. A nitride semiconductor wafer, comprising:

  • a substrate; and

    a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦

    x≦

    0.05) layer and an AlyGa1-yN (0<

    y≦

    1 and x<

    y) layer,wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor.

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