FLIP-CHIP LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20140061700A1
• Filed: 08/13/2013
• Published: 03/06/2014
• Est. Priority Date: 08/30/2012
• Status: Active Grant

• Current Assignee: Lextar Electronics Corporation
• Original Assignee: Lextar Electronics Corporation
• Inventors: Lee, Chia-En, Chen, Yan-Hao
• Granted Patent: US 8,859,311 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.

Claims

1. A flip-chip light-emitting diode structure, comprising:

a carrier substrate having a first and a second electrode;

a light-emitting die structure located on the carrier substrate and comprising;

a first type semiconductor layer;

a second type semiconductor layer; and

a light emitting layer formed between the first type semiconductor layer and the second type semiconductor layer;

a reflective layer formed on the first type semiconductor layer;

a first aperture penetrating the first type semiconductor layer, the light emitting layer and the second type semiconductor layer;

a dielectric layer covering an inner sidewall of the first aperture and extending to a portion of a surface of the reflective layer;

a first contact layer disposed on the part of the reflective layer not covered by the dielectric layer; and

a second contact layer disposed on a portion of the dielectric layer, wherein the second contact layer fills up the first aperture and is electrically connected to the second type semiconductor layer via the first aperture;

wherein, the first electrode and the second electrode are connected to the first and the second contact layer respectively.

2. The flip-chip light-emitting diode structure according to claim 1, wherein a gap is formed between the first and the second contact layer to expose a portion of the dielectric layer and divide the light-emitting die structure into a first electrode area containing the first contact layer and a second electrode area containing the second contact layer.

3. The flip-chip light-emitting diode structure according to claim 2, wherein the first electrode area further comprises a second aperture located on the dielectric layer to expose a portion of the reflective layer, and the first contact layer is electrically connected to the reflective layer via the second aperture.

4. The flip-chip light-emitting diode structure according to claim 1, wherein the flip-chip light-emitting diode structure further comprises:

a transparent material layer formed on the second type semiconductor layer and having a third aperture aligned with the first aperture; and

a conductive layer formed on the transparent material layer and connected to the second contact layer formed in the first aperture via the third aperture.

5. The flip-chip light-emitting diode structure according to claim 4, wherein the conductive layer is a strip-shaped conductive layer and extends along an edge of the transparent material layer.

6. The flip-chip light-emitting diode structure according to claim 5, further comprising:

a transparent substrate; and

a light conversion layer located between the transparent material layer and the transparent substrate.

7. The flip-chip light-emitting diode structure according to claim 6, wherein the transparent substrate further comprises a rough structure embedded into the light conversion layer.

8. The flip-chip light-emitting diode structure according to claim 1, wherein the first aperture penetrates a portion or the entire of the second type semiconductor layer.

9. The flip-chip light-emitting diode structure according to claim 1, wherein the first and the second contact layer are formed by a metal eutectic material.

10. A manufacturing method of a flip-chip light-emitting diode structure,

wherein the method comprises:

forming a light-emitting die structure on a growth substrate, wherein the light-emitting die structure comprises a second type semiconductor layer formed on the growth substrate, a light emitting layer located on the second type semiconductor layer, and a first type semiconductor layer located on the light emitting layer;

forming a first aperture penetrating the first type semiconductor layer, the light emitting layer and the second type semiconductor layer in a predetermined second electrode area;

forming a reflective layer on a portion of the first type semiconductor layer;

forming a dielectric layer on an inner wall of the first aperture, wherein the dielectric layer extends to a portion of a surface of the reflective layer;

forming a first contact layer on the part of the reflective layer not covered by the dielectric layer in a predetermined first electrode area;

forming a second contact layer on the dielectric layer, wherein the second contact layer is connected to the second type semiconductor layer via the first aperture;

removing the growth substrate to expose the second type semiconductor layer; and

overturning the light-emitting die structure to be bonded to a carrier substrate whose surface has a first and a second electrode respectively connected to the first and the second contact layer.

11. The manufacturing method according to claim 10, further comprising:

forming a transparent material layer on the second type semiconductor layer, wherein the transparent material layer has a third aperture aligned with the first aperture; and

forming a conductive layer on the transparent material layer, wherein the conductive layer extends to the interior of the third aperture;

wherein, the third aperture aligned with the first aperture is formed to directly penetrate the light-emitting die structure in the step of forming the first aperture, or the third aperture is formed on the transparent material layer after the first aperture is formed.

12. The manufacturing method according to claim 11, wherein the conductive layer is a strip-shaped conductive layer extending along an edge of the transparent material layer.

13. The manufacturing method according to claim 12, further comprising:

forming a light conversion layer on the second type semiconductor layer.

14. The manufacturing method according to claim 13, wherein the light conversion layer is directly formed on the second type semiconductor layer, or the light conversion layer is firstly formed on the transparent material layer and then attached on the second type semiconductor layer.

15. The manufacturing method according to claim 14, wherein in the step of forming the first aperture, the first aperture penetrates a portion of the thickness of the second type semiconductor layer.

16. The manufacturing method according to claim 10, wherein the first and the second contact layer are respectively formed by a metal eutectic material.

17. The manufacturing method according to claim 13, further comprising:

a transparent substrate having a rough structure embedded into the light conversion layer.

18. A manufacturing method of a flip-chip light-emitting diode structure, wherein the method comprises:

forming a light-emitting die structure on a growth substrate, wherein the light-emitting die structure comprises a first type semiconductor layer formed on the growth substrate, a light emitting layer formed on the first type semiconductor layer, and a second type semiconductor layer formed on the light emitting layer;

removing the growth substrate to expose the first type semiconductor layer;

forming a first aperture penetrating the first type semiconductor layer and the second type semiconductor layer in a predetermined second electrode area;

forming a reflective layer on a portion of the first type semiconductor layer;

forming a dielectric layer on an inner wall of the first aperture, wherein the dielectric layer extends to a portion of a surface of the reflective layer;

forming a first contact layer on the part of the reflective layer not covered by the dielectric layer in a predetermined first electrode area;

forming a second contact layer on the dielectric layer, wherein the second contact layer is connected to the second type semiconductor layer via the first aperture; and

bonding the light-emitting die structure to a carrier substrate whose surface has a first and a second electrode respectively connected to the first and the second contact layer.

19. The manufacturing method according to claim 18, wherein after the step of forming the dielectric layer on the inner wall of the first aperture, the method further comprises forming a second aperture to expose the reflective layer, so that the first contact layer is connected to the reflective layer via the second aperture.

20. The manufacturing method according to claim 18, wherein in the step of forming the first aperture, the first aperture penetrates the entire thickness of the second type semiconductor layer.