×

SEMICONDUCTOR FIN ON LOCAL OXIDE

  • US 20140061862A1
  • Filed: 08/29/2012
  • Published: 03/06/2014
  • Est. Priority Date: 08/29/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure comprising:

  • a single crystalline semiconductor material portion in a substrate;

    a semiconductor oxide portion located on said single crystalline semiconductor material portion and including a first semiconductor oxide portion comprising an oxide of a first semiconductor material and a second semiconductor oxide portion contacting a top surface of said first semiconductor oxide portion and comprising an oxide of a second semiconductor material that is different from said first semiconductor material; and

    a semiconductor fin comprising a portion of said second semiconductor material.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×