ELECTRONIC ELEMENT INCLUDING DIELECTRIC STACK

• US 20140061869A1
• Filed: 08/31/2012
• Published: 03/06/2014
• Est. Priority Date: 08/31/2012
• Status: Abandoned Application

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Nelson, Shelby F., Ellinger, Carolyn R., Levy, David H.
• Application Number:
  US13/600,266
• Publication Number:
  US 20140061869A1
• Time in Patent Office: Days
• US Class Current: 257/635
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

An electronic element includes a substrate; a patterned first electrically conductive layer on the substrate; a patterned second electrically conductive layer on the substrate; and a dielectric stack on the substrate. A portion of the first electrically conductive layer and a portion of the second electrically conductive layer overlap each other such that an overlap region is present. At least a portion of the dielectric stack is positioned in the overlap region between the patterned first electrically conductive layer and the patterned second electrically conductive layer. The dielectric stack includes a first inorganic thin film dielectric material layer and a second inorganic thin film dielectric material layer. The first inorganic thin film dielectric material layer and the second inorganic thin film dielectric material layer have the same material composition.

Claims

1. An electronic element comprising:

a substrate;

a patterned first electrically conductive layer on the substrate;

a patterned second electrically conductive layer on the substrate, a portion of the first electrically conductive layer and a portion of the second electrically conductive layer overlapping each other such that an overlap region is present; and

a dielectric stack, at least a portion of the dielectric stack being positioned in the overlap region between the patterned first electrically conductive layer and the patterned second electrically conductive layer, the dielectric stack including a first inorganic thin film dielectric material layer and a second inorganic thin film dielectric material layer in contact with the first inorganic thin film dielectric material layer, the first inorganic thin film dielectric material layer and the second inorganic thin film dielectric material layer having the same material composition.

2. The electronic element of claim 1, wherein the dielectric stack is patterned.

3. The electronic element of claim 2, wherein the pattern of the first inorganic thin film dielectric material layer and the pattern of the second inorganic thin film dielectric material layer are misaligned.

4. The electronic element of claim 2, wherein the pattern of the first inorganic thin film dielectric material layer and the pattern of the second inorganic thin film dielectric material layer are different.

5. The electronic element of claim 1, the first inorganic thin film dielectric material layer having a thickness and the second inorganic thin film dielectric material layer having a thickness, wherein the thickness of the first inorganic thin film dielectric material layer and the thickness of the second inorganic thin film dielectric material layer are the same.

6. The electronic element of claim 1, wherein the first inorganic thin film dielectric material layer and the second inorganic thin film dielectric material layer are in contact with each other.

7. The electronic element of claim 6, wherein a change in an intensity signal within the dielectric stack for at least one of an impurity and a compositional species is 50% or greater.

8. The electronic element of claim 1, wherein the patterned first electrically conductive layer includes a plurality of material layers.

9. The electronic element of claim 1, wherein the patterned second electrically conductive layer includes a plurality of material layers.

10. The electronic element of claim 1, wherein the second inorganic thin film dielectric material layer conforms to first inorganic thin film dielectric material layer.

11. The electronic element of claim 1, the first inorganic thin film dielectric material layer having been treated prior to deposition of the second inorganic thin film dielectric material layer, wherein treatment of the first thin film dielectric material layer includes subjecting the first thin film dielectric material layer to a different environmental condition than was experienced during the deposition of the first thin film dielectric material layer.

12. The electronic element of claim 11, wherein the first inorganic thin film dielectric material layer was treated using an oxygen plasma.

13. The electronic element of claim 1, wherein the material composition of the first inorganic thin film dielectric material layer and the second inorganic thin film dielectric material layer is Al₂O₃.

14. The electronic element of claim 1, wherein a change in an intensity signal within the dielectric stack for at least one of an impurity and a compositional species is 50% or greater.