Method and Apparatus for a Large Area Inductive Plasma Source

• US 20140062285A1
• Filed: 08/29/2012
• Published: 03/06/2014
• Est. Priority Date: 08/29/2012
• Status: Abandoned Application

• Current Assignee: MKS Instruments Incorporated
• Original Assignee: MKS Instruments Incorporated
• Inventors: Chen, Xing
• Application Number:
  US13/598,148
• Publication Number:
  US 20140062285A1
• Time in Patent Office: Days
• US Class Current: 313/231.31
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H01J 37/32669 Particular magnets or magnet arrangements for controlling the discharge
• CPC Class Codes: H05H 7/04 Magnet systems , e.g. undulators, wigglers free-electron laser H01S3/0903; Energisation thereof

Abstract

A plasma source for providing dissociated gas to semiconductor process chamber is provided. The plasma chamber can have at least one gas inlet and at least one chamber wall for containing the gas, a plurality of magnetic cores disposed relative to the plasma chamber such that the plasma chamber passes through each of the plurality of magnetic cores. A primary winding can be coupled to the plurality of magnetic cores. The plasma chamber can generate a toroidal plasma along a plane extending through the plasma chamber and which is at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber.

Claims

1. A plasma source for providing dissociated gas to semiconductor process chamber, the plasma source comprising:

a plasma chamber having at least one gas inlet, at least one chamber wall for containing the gas, and at least one outlet into the semiconductor process chamber;

a plurality of magnetic cores disposed relative to the plasma chamber such that the plasma chamber passes through each of the plurality of magnetic cores,

the plasma chamber generating a toroidal plasma along a plane extending through the plasma chamber and which is at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber; and

a primary winding coupled to the plurality of magnetic cores.

2. The plasma source of claim 1 further comprising an RF power supply, the RF power supply having an output coupled to the primary winding to drive current in the primary winding, the current induces an AC potential within the plasma chamber.

3. The plasma source of claim 1 further comprising a showerhead located between the plasma chamber and the sample holder to distribute excited gas output from the plasma chamber over a substrate positioned atop the sample holder.

4. The plasma chamber of claim 1 further comprising at least one electrode capacitively coupled to the plasma chamber to generate free charges that assist the ignition of a plasma in the plasma chamber.

9. The method of claim 1 further comprising positioning a showerhead between the plasma source and the sample holder to distribute excited gas output from the plasma chamber over a substrate positioned atop the sample holder.

5. A method for dissociating gas within a plasma source for use in a semiconductor process chamber, the method comprising:

flowing via at least one inlet, a gas into a toroidal plasma chamber having a primary winding coupled to the toroidal plasma chamber and a plurality of magnetic cores oriented such that the toroidal plasma chamber passes through each of the plurality of magnetic cores;

generating a plasma along a plane extending through the toroidal plasma chamber, such plasma being at least substantially parallel to a top surface of a sample holder disposed within the semiconductor process chamber; and

directing the plasma, via at least one outlet in the toroidal plasma chamber, in an orthogonal direction relative to the plane toward the top surface of the sample holder.

6. The method of claim 5, further comprising coupling the toroidal plasma chamber to a top of the semiconductor process chamber.

7. The method of claim 6, further comprising positioning the at least one outlet in a substantially central location in the process chamber top.

8. The method of claim 6, further comprising evenly distributing the plurality of magnetic cores around a circumference of the toroidal plasma chamber.

10. The method of claim 6, further comprising:

flowing via a second gas inlet, the gas into a second toroidal plasma chamber having a second primary winding coupled to the second toroidal plasma chamber and a second plurality of magnetic cores oriented such that the second toroidal plasma chamber passes through each of the second plurality of magnetic cores;

generating a second plasma along a plane extending through the second toroidal plasma chamber, such second plasma being at least substantially parallel to a surface of the sample holder disposed within the semiconductor process chamber; and

directing the second plasma, via a second outlet in the toroidal plasma chamber, in a direction orthogonal to the plane toward the surface of the sample holder.

11. A plasma source comprising:

a toroidal plasma chamber;

a primary winding around an exterior of the toroidal plasma chamber; and

a plurality of magnetic cores, wherein the ring plasma chamber passes through each of the plurality of magnetic cores.

12. The toroidal plasma chamber of claim 11, wherein the toroidal plasma chamber is coupled to a process chamber top and further comprising a plurality of outlets into the process chamber top.

13. The toroidal plasma chamber of claim 12, wherein at least one of the plurality of outlets is located in a substantially central location in the process chamber top.

14. The toroidal plasma chamber of claim 11, further comprising at least one process gas inlet coupling a process gas source to the plasma chamber.

15. The toroidal plasma chamber of claim 11, wherein the magnetic cores are substantially evenly distributed around the circumference of the toroidal plasma chamber.

16. The plasma chamber of claim 11, wherein the ferrites are in a plurality of groups around the circumference of the toroidal plasma chamber.

17. The plasma source of claim 11, wherein the toroidal plasma chamber is coupled to a process chamber such that a toriodal plasma generated in the toroidal plasma chamber is at least substantially parallel to a top surface of a sample holder disposed within the process chamber.

18. A plasma source comprising:

a plurality of toroidal plasma chambers;

a plurality of primary windings, wherein each one of the plurality of primary windings is wrapped around an exterior one of the plurality of the toroidal plasma chambers; and

a plurality of magnetic cores, wherein each one of the plurality of the toroidal plasma chamber passes through a respective portion of the plurality of magnetic cores.

19. The plasma source of claim 18, wherein the plurality of toroidal plasma chambers are substantially concentric.

20. The plasma source of claim 18, wherein each one of the plurality of toroidal plasma chambers are adjacent to at least another one of the plurality of toroidal plasma chambers.

21. The plasma source of claim 18, wherein each one of the plurality of plasma chambers includes corresponding plurality of plasma chamber outlets coupling each one of the plurality the plasma chambers to a process chamber.

22. The plasma source of claim 18, further comprising at least one process gas inlet to couple a process gas source to each one of the plurality the plasma chambers.

23. The plasma source of claim 18, wherein the magnetic cores are substantially evenly distributed around the circumference of the ring plasma chamber.

24. The plasma source of claim 18, wherein the magnetic cores are in a plurality of groups each group is located around the circumference of one of the plurality of ring plasma chambers.

25. The plasma source of claim 18, wherein the toroidal plasma chamber is one of a group of shapes consisting of substantially round, substantially triangular, substantially rectangular, or substantially polygonal shape.

26. The plasma source of claim 18, wherein each of the plurality of toroidal plasma chambers is coupled to a process chamber such that a plasma generated in each of the plurality of toroidal plasma chambers is substantially parallel to a substrate within the process chamber.

27. A plasma source comprising:

a toroidal plasma chamber;

a primary winding around an exterior of the toroidal plasma chamber;

a plurality of magnetic cores, wherein the toroidal plasma chamber passes through each of the plurality of magnetic cores; and

a plurality of plasma chamber outlets coupling the toroidal plasma chamber to a process chamber, each one of the plurality plasma chamber outlets having a respective plasma restriction.

28. The plasma source of claim 27, further comprising at least one process gas inlet coupling a process gas source to the plasma chamber.

29. The plasma source of claim 28, further comprising a process gas flow rate control device coupled to the at least one process gas inlet.

30. The plasma source of claim 27, wherein the magnetic cores are substantially evenly distributed around the circumference of the ring plasma chamber.

31. The plasma source of claim 27, wherein the magnetic cores are in a plurality of groups, each group is located around the circumference of the toroidal plasma chamber.

32. The plasma source of claim 27, wherein the toroidal plasma chamber is one of a group of shapes consisting of substantially round, substantially triangular, substantially rectangular, or substantially polygonal shape.

33. The plasma source of claim 27, wherein the toroidal plasma chamber is coupled to a process chamber such that a plasma generated in the toroidal plasma chamber is substantially parallel to a substrate within the process chamber.