SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM
First Claim
1. A method of calibrating a bias supply configured to generate a potential on a top surface of a substrate during plasma processing of the substrate, the method comprising:
- receiving a modified periodic voltage function comprising pulses and a portion between the pulses;
receiving an expected ion energy;
receiving an expected ion current;
delivering the modified periodic voltage function to a plasma load emulator;
measuring a voltage across a sheath capacitance component of the plasma load emulator;
applying a known current from a current source of the plasma load emulator to the sheath capacitance component;
comparing the voltage across the sheath capacitance component to the expected ion energy and determining an ion energy error from this comparing;
comparing the current to the expected ion current and determining an ion current error from this comparing; and
reporting the ion energy error and the ion current error.
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Accused Products
Abstract
Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.
149 Citations
31 Claims
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1. A method of calibrating a bias supply configured to generate a potential on a top surface of a substrate during plasma processing of the substrate, the method comprising:
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receiving a modified periodic voltage function comprising pulses and a portion between the pulses; receiving an expected ion energy; receiving an expected ion current; delivering the modified periodic voltage function to a plasma load emulator; measuring a voltage across a sheath capacitance component of the plasma load emulator; applying a known current from a current source of the plasma load emulator to the sheath capacitance component; comparing the voltage across the sheath capacitance component to the expected ion energy and determining an ion energy error from this comparing; comparing the current to the expected ion current and determining an ion current error from this comparing; and reporting the ion energy error and the ion current error. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A system comprising:
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a bias supply providing a modified periodic voltage, the bias supply comprising; a power supply configured to provide a periodic voltage function; an ion current compensation component configured to modify the periodic voltage function with an ion compensation current so that the bias supply provides the modified periodic voltage function; and a controller configured to provide instructions to the power supply to adjust the periodic voltage function and to provide instructions to the ion current compensation component to adjust the ion compensation current; a calibration component receiving the modified periodic voltage function, the calibration component comprising; a load emulator having circuitry configured to emulate a plasma load, the load emulator further configured to receive the modified periodic voltage function; a measurement component configured to make one or more measurements of the modified periodic voltage function as it interacts with the circuitry of the load emulator; and an analysis component configured to determine an ion current error by comparing at least one measured value from the measurement component and at least one expected value from the bias supply. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A system comprising:
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a bias supply generating a modified periodic voltage function, wherein the modified periodic voltage function comprises periodic pulses with a sloped portion between the pulses, wherein the slope of the sloped portion between the pulses is controlled via an ion compensation current; and a calibration component receiving the modified periodic voltage function and measuring a voltage and a current of the modified periodic voltage function in the load emulator, the voltage emulating a substrate voltage associated with a plasma load and the current emulating an ion current in the plasma load. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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29. A calibration component comprising:
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a load emulator configured to receive a modified periodic voltage function; a measurement component configured to measure at least a current and a voltage within the load emulator as the modified periodic voltage function interacts with circuitry within the load emulator; and an analysis component configured to compare the measured current and the measured voltage to an expected current and an expected voltage. - View Dependent Claims (30, 31)
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Specification