RF Switch Branch Having Improved Linearity
First Claim
1. A radio frequency (RF) switch branch having a reduced nonlinearity, said RF switch branch comprising:
- a primary transistor;
a first transistor having power terminals electrically connected between a drain node and a body node of said primary transistor;
a second transistor having power terminals electrically connected between said body node and a source node of said primary transistor.
1 Assignment
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Accused Products
Abstract
Disclosed is a radio frequency (RF) switch branch having a reduced nonlinearity and an associated method for reducing nonlinearity in a RF switch branch. The RF switch branch includes a primary transistor, a first transistor having power terminals electrically connected between a drain node and a body node of the primary transistor, and a second transistor having power terminals electrically connected between the body node and a source node of the primary transistor. The RF switch may further include a body resistor electrically connected between the body node of the primary transistor and ground, and a gate resistor electrically connected between a gate of the primary transistor and a gate voltage source. A gate of each of the first transistor and the second transistor is electrically connected to the gate voltage source such that the first transistor and the second transistor are ON only when the primary transistor is ON.
45 Citations
20 Claims
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1. A radio frequency (RF) switch branch having a reduced nonlinearity, said RF switch branch comprising:
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a primary transistor; a first transistor having power terminals electrically connected between a drain node and a body node of said primary transistor; a second transistor having power terminals electrically connected between said body node and a source node of said primary transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for reducing nonlinearity in a radio frequency (RF) switch branch, said method comprising:
for a primary transistor within said RF switch branch; biasing a body node of said primary transistor to a voltage substantially equal to a midpoint between a drain voltage and a source voltage of said primary transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
Specification