RF Switch with Adaptive Drain and Source Voltage
First Claim
1. A radio frequency (RF) switch, comprising:
- a common port;
a first port;
a second port;
a first semiconductor switching element disposed in a first RF pathway between the common port and the first port;
a second semiconductor switching element disposed in a second RF pathway between the common port and the second port;
a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway; and
a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway.
1 Assignment
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Accused Products
Abstract
A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.
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Citations
20 Claims
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1. A radio frequency (RF) switch, comprising:
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a common port; a first port; a second port; a first semiconductor switching element disposed in a first RF pathway between the common port and the first port; a second semiconductor switching element disposed in a second RF pathway between the common port and the second port; a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway; and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of operating a radio frequency (RF) switch, comprising:
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applying a first gate control signal to a first switching device disposed in a first RF pathway; applying a second gate control signal, different from the first gate control signal, to a second switching device disposed in a second RF pathway; applying a first bias signal to source and drain nodes of the first switching device; and applying a second bias signal, different from the first bias signal, to source and drain nodes of the second switching device. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification