DISCRETE SAMPLING BASED NONLINEAR CONTROL SYSTEM

• US 20140065733A1
• Filed: 11/13/2013
• Published: 03/06/2014
• Est. Priority Date: 01/24/2011
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Ausschnitt, Christopher P.
• Granted Patent: US 8,874,249 B2
• Time in Patent Office: Days
• US Class Current: 438/8
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G05B 13/02 electric
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

System, method and computer program product for configuring and controlling a facility to perform a manufacturing process and updating a tool controlling the process according to a model employed for mapping calculated coefficients that characterize non-linear variations observed of a product to actual control parameters governing the processes/tools used by the facility during the manufacturing process. The method enables real-time control of variation in an exposure step of a patterning process using an exposure tool to minimize a nonlinear variation in one or more pattern attributes by adjusting the exposure tool or the patterning process corresponding to the calculated coefficients. In the method, measurements of product attributes, obtained by finite sampling over a well defined domain, are projected onto a predefined reference mesh spanning the domain, using a physically based model comprised of functions constructed to be orthogonal and normalized over a discrete set of reference mesh locations.

Claims

1. A method for performing a real-time control of a semiconductor product manufacturing process, the method comprising:

measuring attributes of a spatial feature being patterned over an area of a semiconductor product being manufactured by one or more semiconductor manufacturing tools, the measured attributes including;

a non-linear spatial variation of the feature of the semiconductor product;

generating one or more orthogonal and normalized mesh functions which model the non-linear spatial variation of the feature on the semiconductor product being manufactured;

determining coefficients of the one or more generated orthogonal and normalized mesh functions in real-time for particular non-spatial variations;

mapping the determined coefficients to actual process parameters that govern the semiconductor product manufacturing process;

adjusting, based on the determined coefficients, the one or more semiconductor manufacturing tools during manufacturing the semiconductor product; and

correcting, by the semiconductor manufacturing tool adjustment, the non-linear spatial variation on the feature of the semiconductor product being manufactured,

wherein a processor coupled to a memory device is configured to perform;

the measuring, the generating, the determining, the adjusting, the mapping and the correcting.

2. The method according to claim 1, wherein the correcting the non-linear spatial variation includes:

adjusting the determined coefficients;

minimizing, based on the adjusting the determined coefficients, the non-linear spatial variation on discrete locations of the semiconductor product feature being manufactured;

improving, by the minimizing the non-linear spatial variation, a boundary condition behavior of the semiconductor product being manufactured, the boundary condition including one or more of;

a field edge of the semiconductor product having the feature, a wafer edge of the semiconductor product having the feature.

3. The method according to claim 2, wherein the determined coefficients include:

a first coefficient that pertains to a field variation of the semiconductor product feature being manufactured, the first coefficient applicable for real-time adjusting of one or more semiconductor manufacturing tools associated with a lens scanning operation among the one or more semiconductor manufacturing tools;

a second coefficient that pertains to a grid variation of the semiconductor product feature being manufactured, the second coefficient applicable for real-time adjusting of a scanning step of an exposure tool among the one or more semiconductor manufacturing tools; and

a third coefficient that pertains to a grid field deformation used for an overlay control of the semiconductor product feature being manufactured, the third coefficient applicable to an adjustment of the one or more semiconductor manufacturing tools associated with a lens scanning operation of the one or more semiconductor manufacturing tools.

4. The method according to claim 3, wherein the mesh functions represent one or more non-linear spatial variations in pattern attributes over discrete locations of the semiconductor product being manufactured.

5. The method according to claim 1, wherein the semiconductor manufacturing tool adjustment comprises:

reducing a coupling between the determined coefficients.

6. The method according to claim 3, wherein the determining the coefficients comprises:

fitting the one or more orthogonal and normalized mesh functions to the pattern attributes over the discrete locations of the semiconductor product being manufactured.

7. The method according to claim 1, wherein a summation of a multiplication of two different orthogonal and normalized mesh functions within a domain results in zero.

8. The method according to claim 1, wherein the measuring the attributes comprises:

representing the non-linear spatial variation as a vector that represents the non-linear spatial variation of the semiconductor product feature in 2 dimensions (x and y directions).

9. The method according to claim 1, wherein the orthogonal and normalized mesh functions characterize non-uniformity of a patterning process over the semiconductor product being manufactured and are orthogonalized over field and grid domains in order to form field and grid mesh functions.

10. An apparatus for performing a real-time control of a semiconductor product manufacturing process, the method comprising:

a memory device;

a processor coupled to the memory device, wherein the processor is configured to perform;

measuring attributes of a spatial feature being patterned over an area of a semiconductor product being manufactured by one or more semiconductor manufacturing tools, the measured attributes including;

a non-linear spatial variation of the feature of the semiconductor product;

generating one or more orthogonal and normalized mesh functions which model the non-linear spatial variation of the feature on the semiconductor product being manufactured;

determining coefficients of the one or more generated orthogonal and normalized mesh functions in real-time for particular non-spatial variations;

adjusting, based on the determined coefficients, the one or more semiconductor manufacturing tools during manufacturing the semiconductor product;

mapping the determined coefficients to actual process parameters that govern the semiconductor product manufacturing process; and

correcting, by the performed semiconductor manufacturing tool adjustment, the non-linear spatial variation on the feature of the semiconductor product being manufactured.

11. The system according to claim 10, wherein in order to perform the correcting the non-linear spatial variation, the processor is further configured to perform:

adjusting the determined coefficients;

minimizing, based on the adjusting the determined coefficients, the non-linear spatial variation on discrete locations of the semiconductor product feature being manufactured;

improving, by the minimizing the non-linear spatial variation, a boundary condition behavior of the semiconductor product being manufactured, the boundary condition including one or more of;

a field edge of the semiconductor product having the feature, a wafer edge of the semiconductor product having the feature.

12. The system according to claim 11, wherein the determined coefficients include:

a first coefficient that pertains to a field variation of the semiconductor product feature being manufactured, the first coefficient applicable for real-time adjusting of one or more semiconductor manufacturing tools associated with a lens scanning operation among the one or more semiconductor manufacturing tools;

a second coefficient that pertains to a grid variation of the semiconductor product feature, the second coefficient applicable for real-time adjusting of a scanning step of an exposure tool among the one or more semiconductor manufacturing tools; and

a third coefficient that pertains to a grid field deformation used for an overlay control of the semiconductor product feature being manufactured, the third coefficient applicable to an adjustment of the one or more semiconductor manufacturing tools associated with the lens scanning operation among the one or more semiconductor manufacturing tools.

13. The system according to claim 12, wherein the mesh functions represent one or more non-linear spatial variations in pattern attributes over discrete locations of the semiconductor product being manufactured.

14. The system according to claim 10, wherein the adjusting the semiconductor manufacturing tool comprises:

reducing a coupling between the determined coefficients.

15. The system according to claim 14, wherein in order to perform the determining the coefficients, the processor is further configured to perform:

fitting the one or more orthogonal and normalized mesh functions to the pattern attributes over the discrete locations of the semiconductor product being manufactured.

16. The system according to claim 10, wherein a summation of a multiplication of two different orthogonal and normalized mesh functions within a domain results in zero.

17. The system according to claim 10, wherein in order to perform the measuring the attributes, the processor is further configured to perform:

representing the non-linear spatial variation as a vector that represents the non-linear spatial variation of the feature in 2 dimensions (x and y directions).

18. The system according to claim 10, wherein the orthogonal and normalized mesh functions characterize non-uniformity of a patterning process over the semiconductor product being manufactured and are orthogonalized over field and grid domains in order to form field and grid mesh functions.

19. A computer program product for performing a real-time control of a semiconductor product manufacturing process, the computer program device comprising a non-transitory storage medium readable by a processing circuit and storing instructions run by the processing circuit for performing a method, the method comprising:

measuring attributes of a spatial feature being patterned over an area of a semiconductor product being manufactured by one or more semiconductor manufacturing tools, the measured attributes including;

a non-linear spatial variation of the feature of the semiconductor product;

generating one or more orthogonal and normalized mesh functions which model the non-linear spatial variation of the feature on the semiconductor product being manufactured;

determining coefficients of the one or more generated orthogonal and normalized mesh functions in real-time for particular non-spatial variations;

adjusting, based on the determined coefficients, the one or more semiconductor manufacturing tools during manufacturing the semiconductor product;

mapping the determined coefficients to actual process parameters that govern the semiconductor product manufacturing process; and

correcting, by the performed semiconductor manufacturing tool adjustment, the non-linear spatial variation on the feature of the semiconductor product being manufactured.

20. The computer program product according to claim 19, wherein the correcting the non-linear spatial variation includes:

adjusting the determined coefficients;

minimizing, based on the adjusting the determined coefficients, the non-linear spatial variation on discrete locations of the semiconductor product feature being manufactured;

improving, by the minimizing the non-linear spatial variation, a boundary condition behavior of the semiconductor product being manufactured, the boundary condition including one or more of;

a field edge of the semiconductor product having the feature, a wafer edge of the semiconductor product having the feature.

21. The computer program product according to claim 20, wherein the determined coefficients include:

a first coefficient that pertains to a field variation of the semiconductor product feature being manufactured, the first coefficient applicable for real-time adjusting of one or more semiconductor manufacturing tools associated with a lens scanning operation among the one or more semiconductor manufacturing tools;

a second coefficient that pertains to a grid variation of the semiconductor product feature, the second coefficient applicable for real-time adjusting of a scanning step of an exposure tool among the one or more semiconductor manufacturing tools; and

a third coefficient that pertains to a grid field deformation used for an overlay control of the semiconductor product feature being manufactured, the third coefficient applicable to an adjustment of the one or more semiconductor manufacturing tools associated with the lens scanning operation among the one or more semiconductor manufacturing tools.

22. The computer program product according to claim 21, wherein the mesh functions represent one or more non-linear spatial variations in pattern attributes over discrete locations of the semiconductor product being manufactured.

23. The computer program product according to claim 19, wherein the performing the semiconductor manufacturing tool adjust comprises:

reducing a coupling between the determined coefficients.