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Photoresist Simulation

  • US 20140067346A1
  • Filed: 08/28/2013
  • Published: 03/06/2014
  • Est. Priority Date: 11/12/2009
  • Status: Active Grant
First Claim
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1. A processor based method for measuring dimensional properties of a simulated photoresist profile, the method comprising steps of:

  • determining a number of acid generators and quenchers within a virtual photoresist volume;

    determining a number of photons absorbed by the virtual photoresist volume,determining a number of the acid generators converted to acid within the virtual photoresist volume;

    determining a number of acid and quencher reactions within the virtual photoresist volume;

    calculating a development of the virtual photoresist volume;

    producing with a processor a three-dimensional simulated scanning electron microscope image of the simulated photoresist profile created by the development of the virtual photoresist volume;

    measuring the dimensional properties of the simulated photoresist profile; and

    fabricating integrated circuits using processes that are based at least in part on the dimensional properties of the photoresist profile.

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