Photoresist Simulation
First Claim
1. A processor based method for measuring dimensional properties of a simulated photoresist profile, the method comprising steps of:
- determining a number of acid generators and quenchers within a virtual photoresist volume;
determining a number of photons absorbed by the virtual photoresist volume,determining a number of the acid generators converted to acid within the virtual photoresist volume;
determining a number of acid and quencher reactions within the virtual photoresist volume;
calculating a development of the virtual photoresist volume;
producing with a processor a three-dimensional simulated scanning electron microscope image of the simulated photoresist profile created by the development of the virtual photoresist volume;
measuring the dimensional properties of the simulated photoresist profile; and
fabricating integrated circuits using processes that are based at least in part on the dimensional properties of the photoresist profile.
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Abstract
A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.
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Citations
10 Claims
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1. A processor based method for measuring dimensional properties of a simulated photoresist profile, the method comprising steps of:
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determining a number of acid generators and quenchers within a virtual photoresist volume; determining a number of photons absorbed by the virtual photoresist volume, determining a number of the acid generators converted to acid within the virtual photoresist volume; determining a number of acid and quencher reactions within the virtual photoresist volume; calculating a development of the virtual photoresist volume; producing with a processor a three-dimensional simulated scanning electron microscope image of the simulated photoresist profile created by the development of the virtual photoresist volume; measuring the dimensional properties of the simulated photoresist profile; and fabricating integrated circuits using processes that are based at least in part on the dimensional properties of the photoresist profile. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A processor based method for measuring dimensional properties of a simulated photoresist profile, the method comprising steps of:
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inputting photoresist and exposure parameters into a stochastic model of a photoresist process; computing the simulated photoresist profile from the stochastic model using a processor; measuring the dimensional properties of the simulated photoresist profile using a critical dimension scanning electron microscope simulator running on the processor; and fabricating integrated circuits using processes that are based at least in part on the dimensional properties of the photoresist profile.
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Specification