Method for Forming a Metal Chalcogenide

• US 20140069323A1
• Filed: 09/12/2012
• Published: 03/13/2014
• Est. Priority Date: 09/12/2012
• Status: Abandoned Application

• Current Assignee: Precision Machinery Research & Development Center
• Original Assignee: Precision Machinery Research & Development Center
• Inventors: WANG, Yen-Chau, CHU, Hsiao-Chun, LIU, Wang-Lin
• Application Number:
  US13/611,485
• Publication Number:
  US 20140069323A1
• Time in Patent Office: Days
• US Class Current: 117/8
• CPC Class Codes: C30B 1/023 from solids with amorphous structure
• CPC Class Codes: C30B 29/46 Sulfur-, selenium- or tellurium-containing compounds

Abstract

A method for forming a metal chalcogenide includes: (a) providing a preliminary precursor solution including a first precursor for an elemental metal of Ag, Au, Al, In, Ga, or Tl, a second precursor for a chalcogen element of Se, S, or Te, and a liquid solvent; (b) heating the preliminary precursor solution under an inert ambient, such that the first precursor reacts with the second precursor to obtain a metal chalcogenide precursor that is in an amorphous phase; (c) removing the liquid solvent from the metal chalcogenide precursor; and (d) heating the metal chalcogenide precursor under a hydrogen-containing gas pressure so as to convert the metal chalcogenide precursor into a single crystal phase metal chalcogenide.

Claims

1. A method for forming a metal chalcogenide comprising:

(a) providing a preliminary precursor solution including a first precursor for an elemental metal selected from the group consisting of Ag, Au, Al, In, Ga, Tl and combinations thereof, a second precursor for a chalcogen element selected from the group consisting of Se, S, and Te, and a liquid solvent;

(b) subjecting the preliminary precursor solution to a first heating treatment under an inert ambient, such that the first precursor reacts with the second precursor to obtain a metal chalcogenide precursor that is in an amorphous phase;

(c) removing the liquid solvent from the metal chalcogenide precursor; and

(d) subjecting the metal chalcogenide precursor to a second heating treatment under a hydrogen-containing gas pressure so as to convert the metal chalcogenide precursor into a single crystal phase metal chalcogenide.

2. The method of claim 1, wherein the elemental metal is In, and the chalcogen element is Se.

3. The method of claim 1, wherein the hydrogen-containing gas pressure has a partial pressure of hydrogen gas ranging from 1 to 100 percent of the hydrogen-containing gas pressure, the balance being attributed to an inert gas.

4. The method of claim 3, wherein the partial pressure of the hydrogen gas ranges from 20 to 50 percent of the hydrogen-containing gas pressure.

5. The method of claim 1, wherein the first heating treatment is implemented at a temperature ranging from 120°

C. to 250°

C.

6. The method of claim 1, wherein the first heating treatment is implemented for a time period ranging from 10 hours to 25 hours.

7. The method of claim 1, wherein the second heating treatment is implemented at a temperature ranging from 400°

C. to 700°

C.

8. The method of claim 1, wherein the second heating treatment is implemented for a time period ranging from 15 minutes to 25 hours.

9. The method of claim 1, wherein the liquid solvent includes a metal chelating agent.

10. The method of claim 9, wherein the metal chelating agent is selected from the group consisting of ethylene diamine, triethylene tetramine, divinylamine, and oleylamine.

11. The method of claim 1, wherein step (c) is implemented by drying.