Hydrogenation and Crystallization of Polycrystalline Silicon
First Claim
1. A TFT stack for a liquid crystal display, the stack comprising:
- a silicon layer comprising a heavily doped region, a non-doped region, and a lightly doped region between the heavily doped region and the non-doped region, the heavily doped region being hydrogenated;
an insulation layer comprising a first portion formed over the lightly doped region and a second portion disposed over the non-doped region;
a gate metal electrode layer formed over the second portion of the non-doped region;
a first dielectric layer disposed over the gate metal electrode and over the first portion of the insulation layer, the first dielectric layer being formed through a chemical vapor deposition (CVD) process at a first temperature, wherein a via is formed above the heavily doped region; and
a conductive layer over the via to contact the heavily doped region, wherein the heavily doped region is hydrogenated to reduce the dependence of the capacitance between the gate metal electrode and the conductive layer Cgd upon a bias voltage being applied between the gate metal electrode and the conductive layer.
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Abstract
A TFT stack for a liquid crystal display is provided. The TFT stack includes a silicon layer that includes a heavily doped region, a non-doped region, and a lightly doped region between the heavily doped region and the non-doped region. The heavily doped region is hydrogenated. The TFT stack also includes an insulation layer that includes a first portion formed over the lightly doped region and a second portion disposed over the non-doped region and a gate metal electrode layer formed over the second portion of the non-doped region. The TFT stack also includes a first dielectric layer disposed over the gate metal electrode and over the first portion of the insulation layer. The heavily doped region is hydrogenated to reduce the dependence of the capacitance between the gate metal electrode and the conductive layer Cgd upon a bias voltage being applied between the gate metal electrode and the conductive layer.
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Citations
21 Claims
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1. A TFT stack for a liquid crystal display, the stack comprising:
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a silicon layer comprising a heavily doped region, a non-doped region, and a lightly doped region between the heavily doped region and the non-doped region, the heavily doped region being hydrogenated; an insulation layer comprising a first portion formed over the lightly doped region and a second portion disposed over the non-doped region; a gate metal electrode layer formed over the second portion of the non-doped region; a first dielectric layer disposed over the gate metal electrode and over the first portion of the insulation layer, the first dielectric layer being formed through a chemical vapor deposition (CVD) process at a first temperature, wherein a via is formed above the heavily doped region; and a conductive layer over the via to contact the heavily doped region, wherein the heavily doped region is hydrogenated to reduce the dependence of the capacitance between the gate metal electrode and the conductive layer Cgd upon a bias voltage being applied between the gate metal electrode and the conductive layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating a TFT stack, the method comprising:
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depositing a silicon layer on a substrate, the silicon layer comprising a heavily doped region, a non-doped region, and a lightly doped region between the heavily doped region and the non-doped region; forming an insulation layer having a first portion over the lightly doped region and a second portion over the non-doped region; forming a gate metal electrode over the second portion of the insulation layer above the non-doped region of the silicon layer; depositing a first dielectric layer over the gate metal electrode by using a mixture of precursors comprising hydrogen containing precursors during a chemical vapor deposition (CVD), over the first portion of the insulator layer above the lightly doped region, and over the heavily doped region of the silicon layer at a first temperature; hydrogenating the heavily doped region of the silicon layer to reduce the dependence of the capacitance between the gate metal and the heavily doped region upon a bias voltage; and forming a via through the first and second dielectric layers above the heavily doped region; and depositing a conductive layer over the via. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A TFT for a liquid crystal display (LCD) having an array of pixels, the TFT comprising:
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a silicon layer comprising a plurality of crystals, the plurality of crystals being aligned in the orientation <
100>
to reduce the dependence of the capacitance between a gate electrode and the heavily doped drain region of the silicon Cgd upon a bias voltage;an insulation layer comprising a first portion over the lightly doped region and a second portion over the non-doped region; the gate electrode over the second portion of the insulation layer above the non-doped region; a dielectric layer disposed over the gate metal electrode and over the first portion of the insulation layer, such that a via is formed above the heavily doped region; and a conductive layer over the via to connect to the heavily doped region, the bias voltage being applied between the gate electrode and the conductive layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification