×

Source/Drain Re-Growth for Manufacturing III-V Based Transistors

  • US 20140070276A1
  • Filed: 11/14/2013
  • Published: 03/13/2014
  • Est. Priority Date: 06/01/2009
  • Status: Active Grant
First Claim
Patent Images

1. An integrated circuit structure comprising:

  • a substrate;

    a first semiconductor layer over the substrate, wherein the first semiconductor layer comprises a first III-V compound semiconductor material formed of group III and group V elements;

    a gate structure on the first semiconductor layer;

    a gate spacer on at least one sidewall of the gate structure; and

    a second semiconductor layer comprising a second III-V compound semiconductor material over the first semiconductor layer, wherein the gate spacer adjoins the second semiconductor layer and the gate structure, and wherein the gate spacer spaces apart the second semiconductor layer from the gate structure.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×