IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. An image pickup device, comprising:
- a semiconductor substrate having a main surface;
a photoelectric conversion part that is formed in a predetermined region in the semiconductor substrate and converts entering light into a charge;
a gate electrode of a transfer transistor that is formed over a surface of the semiconductor substrate and transfers the charge generated in the photoelectric conversion part;
a sidewall insulating film that covers a side wall face of the gate electrode and that includes apart extending from a part covering the side wall face and covering a surface of the photoelectric conversion part;
an interlayer insulating film formed so as to cover the sidewall insulating film; and
a waveguide that is formed so as to penetrate through the interlayer insulating film and to reach the sidewall insulating film, and guides light to the photoelectric conversion part.
2 Assignments
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Accused Products
Abstract
To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.
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Citations
14 Claims
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1. An image pickup device, comprising:
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a semiconductor substrate having a main surface; a photoelectric conversion part that is formed in a predetermined region in the semiconductor substrate and converts entering light into a charge; a gate electrode of a transfer transistor that is formed over a surface of the semiconductor substrate and transfers the charge generated in the photoelectric conversion part; a sidewall insulating film that covers a side wall face of the gate electrode and that includes apart extending from a part covering the side wall face and covering a surface of the photoelectric conversion part; an interlayer insulating film formed so as to cover the sidewall insulating film; and a waveguide that is formed so as to penetrate through the interlayer insulating film and to reach the sidewall insulating film, and guides light to the photoelectric conversion part. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing an image pickup device, the method comprising the steps of:
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forming a gate electrode of a transfer transistor transferring a charge, on a surface of a semiconductor substrate having a main surface; forming a photoelectric conversion part converting entering light into a charge by implanting an impurity of a predetermined conduction type into one of regions of the semiconductor substrate, positioned with the gate electrode being interposed; forming a sidewall insulating film that covers a side wall face of the gate electrode and that includes a part extending from a part covering the side wall face to cover a surface of the photoelectric conversion part, by forming a predetermined insulating film so as to cover the gate electrode and the photoelectric conversion part and by performing processing on the predetermined insulating film; forming an interlayer insulating film so as to cover the sidewall insulating film; forming an opening part reaching the sidewall insulating film in the interlayer insulating film; and forming a waveguide guiding light to the photoelectric conversion part so as to fill the opening part. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification