HIGH FREQUENCY AMPLIFIER

• US 20140070891A1
• Filed: 09/20/2012
• Published: 03/13/2014
• Est. Priority Date: 10/17/2011
• Status: Abandoned Application

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Shibuya, Tomohiko, Ajioka, Atsushi, Tsumita, Atsushi
• Application Number:
  US14/008,601
• Publication Number:
  US 20140070891A1
• Time in Patent Office: Days
• US Class Current: 330/296
• CPC Class Codes: H03F 1/0272 by using a signal derived from the output signal
• CPC Class Codes: H03F 1/32 Modifications of amplifiers to reduce non-linear distortion by negative feedback H03F1/34
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2203/21106 An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
• CPC Class Codes: H03F 2203/21142 Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 with semiconductor devices only

Abstract

To prevent a wrap-around signal from an output detection circuit unit that occurs when commonality is achieved between the power supply of the output detection circuit unit and the bias power supply of a power amplification unit. When commonality is achieved between the power supply of a diode of an output detection circuit unit and the power supply of a bias circuit, a resonance circuit is connected between the bias circuit and the output detection circuit unit, thereby preventing a wrap-around signal from the output side of a power amplification transistor from being input to the input side of the power amplification transistor.

Claims

1. A high frequency amplifier, comprising:

a power amplification part that is connected to an input matching circuit and an output matching circuit, that amplifies signals input via the input matching circuit, and that outputs the signals to the output matching circuit;

an output detector circuit part that is connected to the output matching circuit;

a bias circuit that supplies a bias current to the power amplification part and the output detector circuit part; and

a resonance circuit that is located between the bias circuit and the output detector circuit part.

2. The high frequency amplifier according to claim 1, further comprising:

a resistor element that is connected between the bias circuit and the resonance circuit.

3. The high frequency amplifier according to claim 2, wherein

the input matching circuit, the power amplification part, the output detector circuit part, the bias circuit, the resonance circuit, and the resistor element are configured in a semiconductor integrated circuit,

the output detector circuit part is connected to an output of the power amplification part, and

the resonance circuit includes a circuit of a low pass filter type configured with an inductor and a capacitor.

4. The high frequency amplifier according to claim 2, wherein

the resonance circuit and the resistor element are configured with chip components,

the input matching circuit, the power amplification part, the output detector circuit part, and the bias circuit are configured in a semiconductor integrated circuit,

the semiconductor integrated circuit includes an electrode terminal for mounting the resonance circuit and the resistor element,

the chip components of the resonance circuit and the resistor element are mounted on the electrode terminal