METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Abstract
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
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Citations
19 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first oxide semiconductor layer over a substrate; forming a second oxide semiconductor layer over the first oxide semiconductor layer; performing dehydration or dehydrogenation on the first oxide semiconductor layer and the second oxide semiconductor layer; and forming a first conductive layer and a second conductive layer over the second oxide semiconductor layer; wherein the steps of forming the first oxide semiconductor layer and forming the second oxide semiconductor layer is successively performed without exposure to air. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the gate insulating layer; forming a second oxide semiconductor layer over the first oxide semiconductor layer; performing dehydration or dehydrogenation on the first oxide semiconductor layer and the second oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; wherein the steps of forming the first oxide semiconductor layer and forming the second oxide semiconductor layer is successively performed without exposure to air. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification