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METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

  • US 20140073116A1
  • Filed: 08/02/2013
  • Published: 03/13/2014
  • Est. Priority Date: 09/12/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:

  • forming a silicon carbide substrate including a first layer having first conductivity type, a second layer provided on said first layer and having second conductivity type, and a third layer provided on said second layer, separated from said first layer by said second layer, and having said first conductivity type;

    forming a trench provided with an inner surface having a side wall surface and a bottom surface, said side wall surface extending through said third layer and said second layer and reaching said first layer, said bottom surface being formed of said first layer;

    forming a silicon film to cover said bottom surface;

    forming a gate oxide film on said inner surface by oxidation in said trench, said gate oxide film including a first portion formed by oxidation of said silicon carbide substrate, and a second portion formed by oxidation of said silicon film on said bottom surface; and

    forming a gate electrode on said gate oxide film.

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