CAPACITOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME

• US 20140077184A1
• Filed: 07/17/2013
• Published: 03/20/2014
• Est. Priority Date: 09/19/2012
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Im, Choong-Youl, Lee, Il-Jeong, Kwon, Do-Hyun, Yoon, Ju-Won, Ko, Moo-Soon, Woo, Min-Woo
• Application Number:
  US13/944,247
• Publication Number:
  US 20140077184A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]

Abstract

A capacitor positioned on a substrate insulating layer positioned on a substrate. The capacitor includes a first capacitor electrode positioned on the substrate insulating layer, a second capacitor electrode positioned on the first capacitor electrode, and a capacitor insulating layer coming into contact with the first capacitor electrode and the second capacitor electrode between the first capacitor electrode and the second capacitor electrode, and having a higher dielectric constant than the substrate insulating layer.

Claims

1. A capacitor structure, comprising:

a substrate;

a substrate insulating layer positioned on the substrate; and

a capacitor comprising;

a first capacitor electrode positioned on the substrate insulating layer;

a second capacitor electrode positioned on the first capacitor electrode; and

a capacitor insulating layer coming into contact with the first capacitor electrode and the second capacitor electrode between the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer.

2. The capacitor structure of claim 1, wherein:

the capacitor insulating layer includes one or more of zirconium (Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide, tantalum (Ta) oxide, lanthanum (La) oxide, yttrium (Y) oxide, barium (Ba) oxide, strontium (Sr) oxide, calcium (Ca) oxide, and magnesium (Mg) oxide.

3. The capacitor structure of claim 2, wherein:

the second capacitor electrode includes a molybdenum (Mo) alloy including nickel (Ni).

4. The capacitor structure of claim 3, wherein:

the first capacitor electrode includes the molybdenum (Mo) alloy including nickel (Ni).

5. The capacitor structure of claim 4, further comprising:

a first auxiliary electrode coming into contact with the first capacitor electrode; and

a second auxiliary electrode coming into contact with the second capacitor electrode.

6. The capacitor structure of claim 5, further comprising:

a third auxiliary electrode coming into contact with the second auxiliary electrode on the second auxiliary electrode to include the molybdenum (Mo) alloy including nickel (Ni).

7. The capacitor structure of claim 3, wherein:

the first capacitor electrode includes a polysilicon semiconductor material or a metal oxide semiconductor material.

8. The capacitor structure of claim 7, further comprising:

a fourth auxiliary electrode coming into contact with the second capacitor electrode.

9. The capacitor structure of claim 8, further comprising:

a fifth auxiliary electrode coming into contact with the fourth auxiliary electrode on the fourth auxiliary electrode to include the molybdenum (Mo) alloy including nickel (Ni).

10. An organic light emitting diode display comprising:

a capacitor structure according to claim 1;

a driving thin film transistor including a driving gate electrode connected to the capacitor; and

an organic light emitting element connected to the driving drain electrode of the driving thin film transistor.

11. The organic light emitting diode display of claim 10, further comprising:

a scan line extending in a first direction;

a data line extending in a second direction crossing the first direction;

a switching thin film transistor including a switching gate electrode connected to the scan line, a switching source electrode connected to the data line, and a switching drain electrode connected to the capacitor and the driving gate electrode; and

a driving power source line connected to the driving source electrode and the capacitor of the driving thin film transistor and extending in the second direction.