ORGANIC LIGHT EMITTING DIODE

• US 20140077192A1
• Filed: 09/12/2013
• Published: 03/20/2014
• Est. Priority Date: 09/17/2012
• Status: Abandoned Application

• Current Assignee: Dongguan Masstop Liquid Crystal Display Company Limited (Wintek Corporation), Wintek Corporation
• Original Assignee: Dongguan Masstop Liquid Crystal Display Company Limited (Wintek Corporation), Wintek Corporation
• Inventors: Lin, Tsung-Hsien, Kang, Hen-Ta, Chen, Chien-Chung
• Application Number:
  US14/024,646
• Publication Number:
  US 20140077192A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/13 comprising stacked EL layers within one EL unit
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/858 comprising refractive means, e.g. lenses
• CPC Class Codes: H10K 59/879 comprising refractive means, e.g. lenses

Abstract

An organic light emitting diode (OLED) has a plurality of light emitting regions. The OLED includes an anode layer, a cathode layer, an organic light emitting layer, and a wavelength shift layer. The organic light emitting layer is disposed between the anode layer and the cathode layer and correspondingly provides the light emitting regions with a plurality of emitted lights. Here, the organic light emitting layer has a fixed thickness. The wavelength shift layer is disposed outside the organic light emitting layer, the cathode layer, and the anode layer. A wavelength range at half-peak of combination of the emitted lights is wider than a wavelength range at half-peak of one of the lights.

Claims

1. An organic light emitting diode having a plurality of light emitting regions and comprising:

an anode layer;

a cathode layer;

an organic light emitting layer disposed between the anode layer and the cathode layer, the organic light emitting layer providing the light emitting regions with a plurality of emitted lights and having a fixed thickness;

a wavelength shift layer disposed outside the cathode layer, the organic light emitting layer, and the anode layer, wherein a wavelength range at half-peak of the combination of the emitted lights is wider than a wavelength range at half-peak of one of the lights.

2. The organic light emitting diode as recited in claim 1, wherein the organic light emitting layer comprises:

an electron transport layer;

a hole transport layer; and

a plurality of emitting layers disposed between the electron transport layer and the hole transport layer, the emitting layers corresponding to the light emitting regions.

3. The organic light emitting diode as recited in claim 2, wherein doped concentrations of the emitting layers are different from one another.

4. The organic light emitting diode as recited in claim 2, wherein the organic light emitting layer further comprises:

an electron injection layer disposed between the cathode layer and the electron transport layer; and

a hole injection layer disposed between the anode layer and the hole transport layer.

5. The organic light emitting diode as recited in claim 1, wherein the wavelength shift layer comprises a plurality of optical shift layers respectively in contact with the cathode layer, and refractive indices of the optical shift layers are different from one another.

6. The organic light emitting diode as recited in claim 1, wherein the wavelength shift layer is divided into a plurality of optical shift portions corresponding to the light emitting regions, and thicknesses of the optical shift portions are different from one another.

7. The organic light emitting diode as recited in claim 1, further comprising a substrate, wherein the anode layer is disposed between the substrate and the organic light emitting layer, and the cathode layer is disposed between the wavelength shift layer and the organic light emitting layer.

8. The organic light emitting diode as recited in claim 1, further comprising a substrate, wherein the wavelength shift layer is disposed between the substrate and the anode layer.