STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME
First Claim
1. A structure for growth of a nitride semiconductor layer, comprising:
- a sapphire substrate having a growing plane which is an m-plane; and
a plurality of ridge-shaped nitride semiconductor layers formed on the growing plane of the sapphire substrate,wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate,a growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, andan absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and
not more than 35°
.
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Accused Products
Abstract
A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.
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Citations
18 Claims
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1. A structure for growth of a nitride semiconductor layer, comprising:
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a sapphire substrate having a growing plane which is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers formed on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, a growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and
not more than 35°
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for fabricating a multilayer structure, comprising the steps of:
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(a) providing a sapphire substrate having a growing plane which is an m-plane; (b) growing a nitride semiconductor film on the growing plane of the sapphire substrate; (c) forming a plurality of recessed portions so as to penetrate through the nitride semiconductor film, thereby forming a plurality of ridge-shaped nitride semiconductor layers; and (d) growing a nitride semiconductor layer such that the growth starts from the plurality of ridge-shaped nitride semiconductor layers, wherein in the step (c), the plurality of recessed portions are formed such that a bottom surface of the plurality of recessed portions is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and
not more than 35°
.
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Specification