IV MATERIAL PHOTONIC DEVICE ON DBR

• US 20140077240A1
• Filed: 09/17/2012
• Published: 03/20/2014
• Est. Priority Date: 09/17/2012
• Status: Abandoned Application

• Current Assignee: Andrew Clark, Michael Lebby, Radek Roucka, Semans, Scott
• Original Assignee: Andrew Clark, Michael Lebby, Radek Roucka, Semans, Scott
• Inventors: Roucka, Radek, Lebby, Michael, Semans, Scott, Clark, Andrew
• Application Number:
  US13/621,413
• Publication Number:
  US 20140077240A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 31/02165 using interference filters, e.g. multilayer dielectric filters interference filters G02B5/28
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/1812 including only AIVBIV alloys, e.g. SiGe
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

A photonic structure including a substrate of either crystalline silicon or germanium and a multilayer distributed Bragg reflector (DBR) positioned on the substrate. The DBR includes material substantially crystal lattice matching the DBR to the substrate. The DBR includes a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO). A photonic device including multilayers of single crystal IV material positioned on the DBR and including material substantially crystal lattice matching the DBR to the photonic device.

Claims

1. A method of fabricating a photonic device on a silicon or germanium substrate comprising the steps of:

providing a substrate including one of crystalline silicon or germanium;

epitaxially growing a multilayer distributed Bragg reflector on the substrate; and

epitaxially growing a photonic device including multilayers of single crystal IV material on the distributed Bragg reflector.

2. A method as claimed in claim 1 wherein the step of epitaxially growing the multilayer distributed Bragg reflector includes epitaxially growing a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO).

3. A method as claimed in claim 2 wherein the step of epitaxially growing a plurality of pairs of layers of material including any combination of IV materials includes any one of Si, Ge, GeSn, SiGeSn, and combinations thereof.

4. A method as claimed in claim 2 wherein the step of epitaxially growing a plurality of pairs of layers of material including any combination of any rare earth oxide (REO) includes any one of Gd₂O₃, Er₂O₃, Nd₂O₃, Y₂O₃ Pr₂O₃, and combinations thereof.

5. A method as claimed in claim 1 wherein the step of epitaxially growing the multilayer distributed Bragg reflector includes selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the photonic device.

6. A method as claimed in claim 1 wherein the step of epitaxially growing the multilayer distributed Bragg reflector includes selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate.

7. A method as claimed in claim 6 wherein the step of selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate includes epitaxial growing a crystal lattice matching template between the multilayer distributed Bragg reflector and the substrate.

8. A method as claimed in claim 1 wherein the step of epitaxially growing the multilayer distributed Bragg reflector includes engineering a composition of pairs of layers, thicknesses of layers, and sequence of materials and layers in the multilayer distributed Bragg reflector to be reflective within a band of wavelengths required by the photonic device.

9. A method as claimed in claim 8 wherein the step of epitaxially growing the multilayer distributed Bragg reflector includes engineering the thicknesses of the pairs of layers to grow the multilayer distributed Bragg reflector one quarter wavelength thick at an operating wavelength of the photonic device.

10. A method of fabricating a photonic device on a silicon or germanium substrate comprising the steps of:

providing a substrate including one of crystalline silicon or germanium;

epitaxially growing a multilayer distributed Bragg reflector on the substrate, the step including selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate; and

epitaxially growing a photonic device including multilayers of single crystal IV material on the distributed Bragg reflector, the step including selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the photonic device.

11. A method as claimed in claim 10 wherein the step of selecting material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate includes epitaxial growing a crystal lattice matching template between the multilayer distributed Bragg reflector and the substrate.

12. A photonic structure comprising:

a substrate including one of crystalline silicon or germanium;

a multilayer distributed Bragg reflector positioned on the substrate; and

a photonic device including multilayers of single crystal IV material positioned on the distributed Bragg reflector.

13. A photonic structure as claimed in claim 12 wherein the multilayer distributed Bragg reflector includes a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO).

14. A photonic structure as claimed in claim 13 wherein the plurality of pairs of layers of material includes any one of Si, Ge, GeSn, SiGeSn, and combinations thereof.

15. A photonic structure as claimed in claim 13 wherein the plurality of pairs of layers of material include any one of Gd₂O₃, Er₂O₃, Nd₂O₃, Y₂O₃ Pr₂O₃, and combinations thereof.

16. A photonic structure as claimed in claim 12 wherein the multilayer distributed Bragg reflector includes material substantially crystal lattice matching the multilayer distributed Bragg reflector to the photonic device.

17. A photonic structure as claimed in claim 12 wherein the multilayer distributed Bragg reflector includes material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate.

18. A photonic structure as claimed in claim 17 wherein the material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate includes a crystal lattice matching template positioned between the multilayer distributed Bragg reflector and the substrate.

19. A photonic structure as claimed in claim 12 wherein the multilayer distributed Bragg reflector includes a composition of pairs of layers, thicknesses of layers, and sequence of materials and layers selected to be reflective within a band of wavelengths required by the photonic device.

20. A photonic structure as claimed in claim 19 wherein the multilayer distributed Bragg reflector includes thicknesses of the pairs of layers one quarter wavelength thick at an operating wavelength of the photonic device.

21. A photonic structure comprising:

a substrate including one of crystalline silicon or germanium;

a multilayer distributed Bragg reflector positioned on the substrate and including material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate, the multilayer distributed Bragg reflector including a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO); and

a photonic device including multilayers of single crystal IV material positioned on the distributed Bragg reflector and including material substantially crystal lattice matching the multilayer distributed Bragg reflector to the photonic device.

22. A photonic structure as claimed in claim 21 wherein the material substantially crystal lattice matching the multilayer distributed Bragg reflector to the substrate includes a crystal lattice matching template positioned between the multilayer distributed Bragg reflector and the substrate.